Improved single ion implantation with scanning probe alignment

Abstract

Activation improvement of ion implanted boron in silicon through fluorine co-implantation J.Single dopant atoms can affect transport properties in scaled semiconductor devices and coherent control of spin and charge degrees of freedom of single dopant atoms promises to enable quantum computing. The authors report on an improved technique for deterministic placement of single dopant atoms by single ion implantation with scanning probe alignment. Ions are generated in a microwave driven ion source, mass analyzed in a Wien filter, and impinge on spin readout devices after alignment of the ion beam to regions of interest with a noncontact scanning force microscope.

Patterned Formation of Highly Coherent Nitrogen-Vacancy Centers Using a Focused Electron Irradiation Technique

“…For instance, Toyli et al demonstrated lateral control of NVs by ion implanting through nanofabricated apertures 13 , but the resulting coherence times were relatively short (<~ 20 µs). Focused nitrogen-ion [14][15][16] and helium-ion 17 implantation can also localize NV centers but the resulting coherence times are either short, < 1 us, or not reported. Long NV coherence times (~ 700 µs) were demonstrated in nitrogen δ-doped diamond via carbon implantation through apertures 18 .…”

Charge Exchange and Energy Loss of Slow Highly Charged Ions in 1 nm Thick Carbon Nanomembranes

“…Therefore, the interaction of HCI with surfaces may not be described in terms of an equilibrium charge state dependent stopping force. Furthermore, due to the localization of the energy deposition slow HCI can be used as an efficient tool for surface nano-structuring [13][14][15][16][17][18][19][20][21][22][23][24] and tuning of the electrical properties of materials [25], as well as a probe for surface energy deposition processes [26,27]. Recently, it has been shown that slow HCI can create pores in 1 nm thick carbon nanomembranes (CNM) [28,29] mainly by deposition of their potential energy [30].…”

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

“…Local NVformation without global thermal annealing also enables a try-andrepeat approach to NVarray formation. After a single nitrogen ion is implanted and registered in a selected location [5,9], an NVcenter can be formed by low energy electron irradiation, by targeted SHI irradiation [26], or by another form of local excitation [27,28]. The location can be repeatedly probed for the presence of an NVcenter by PL or CL.…”

“…In pure diamonds, nitrogen can be added by implantation of nitrogen ions [5][6][7][8]. Ion implantation offers control over the local nitrogen and NV center concentrations with high spatial resolution [5,9]. When implanting a diamond with nitrogen ions, e. g. of keV to MeV energies, ions transfer kinetic energy to carbon atoms in elastic collisions, leading to collision cascades that generate vacancies and carbon interstitials.…”