2016
DOI: 10.1021/acs.nanolett.5b05304
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Patterned Formation of Highly Coherent Nitrogen-Vacancy Centers Using a Focused Electron Irradiation Technique

Abstract: We demonstrate fully three-dimensional and patterned localization of nitrogenvacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen δ-doping during CVD diamond growth vertically confines nitrogen to 4 nm while electron irradiation with a transmission electron microscope (TEM) laterally confines vacancies to less than 1 µm. We characterize the effects of electron energy and dose on NV formation. Importantly, our technique enables the formation of reliably high-quality NV centers inside… Show more

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Cited by 113 publications
(137 citation statements)
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“…The nanopillar spacing ( ≳ 250 nm) is such that quantum sensing can be performed on the single NV centers in each simultaneously using diffraction-limited wide-field optical detection and microwave control. Nanopillar arrays of this kind could be fabricated by combining existing diamond etching 27 and high resolution NV creation [31][32][33] force vector image will have a spatial resolution defined by the size of the superpixels (ie. ≳500 nm), and using our previous estimates, will achieve a force resolution of 100 pN after ~1 s of measurement time.…”
mentioning
confidence: 99%
“…The nanopillar spacing ( ≳ 250 nm) is such that quantum sensing can be performed on the single NV centers in each simultaneously using diffraction-limited wide-field optical detection and microwave control. Nanopillar arrays of this kind could be fabricated by combining existing diamond etching 27 and high resolution NV creation [31][32][33] force vector image will have a spatial resolution defined by the size of the superpixels (ie. ≳500 nm), and using our previous estimates, will achieve a force resolution of 100 pN after ~1 s of measurement time.…”
mentioning
confidence: 99%
“…As a result, in most cases it would be beneficial to increase the concentration of NV centers while keeping the nitrogen concentration constant, i.e. improve the N to NV conversion efficiency.A common technique for improving the conversion efficiency is the irradiation of the sample with electrons [16][17][18], protons [19], or ions [20], which creates vacancies in the lattice. Additional annealing mobilizes the vacancies, thus increasing their probability of occupying lattice sites adjacent to isolated nitrogens and forming stable NV centers.…”
mentioning
confidence: 99%
“…Improved conversion efficiencies through TEM irradiation at ∼ 200 keV were previously demonstrated in highpressure-high-temperature (HPHT) [17] and delta doped arXiv:1702.05332v3 [quant-ph] 19 Aug 2017 [18] samples. It is necessary to extend these results, and study the effect of irradiation on samples that are more relevant to ongoing research: chemical vapor deposition (CVD), with as grown and implanted NVs, for which the improvement of conversion efficiencies is not trivial.…”
mentioning
confidence: 99%
“…Changing the N 2 flow tunes the resulting N densities. In order to decrease the magnetic noise, diamond growth can be performed using isotopically-purified 12 CH 4 as the carbon source [47,49,50]. Very recently, overgrowth of a nitrogen-terminated diamond surface has been employed for δ-doping [51].…”
Section: Creation Methods and Creation Yieldmentioning
confidence: 99%
“…Very recently, overgrowth of a nitrogen-terminated diamond surface has been employed for δ-doping [51]. -Vacancies are created ex situ by implanting helium ions [52,53], carbon ions [49] or irradiating with electrons [47,50]. A subsequent annealing at high temperature causes vacancy diffusion and creates NV centers (Figure 2c).…”
Section: Creation Methods and Creation Yieldmentioning
confidence: 99%