Improved size homogeneity of InP-on-GaInP Stranski-Krastanow islands by growth on a thin GaP interface layer

Carlsson, N.; Georgsson, Kristina; Montelius, Lars; Samuelson, Lars; Seifert, Werner; Wallenberg, L. Reine

doi:10.1016/0022-0248(95)00235-9

Cited by 52 publications

(14 citation statements)

References 13 publications

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“…However, at larger flat areas residues of the wetting layer or partially formed QD's may be present and consistently we sometimes detect strong luminescence from these. The peak positions and their linewidths are in rough agreement with theoretical and experimental results for InP quantum wells by Carlsson et al 19,20 …”

Section: Discussionsupporting

confidence: 88%

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Quantum-dot-induced ordering inGaxIn1−xP/

et al. 2002

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Thin layers of Ga x In 1Ϫx P grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy ͑TEM͒, scanning tunneling microscopy ͑STM͒, and low-temperature scanning tunneling luminescence ͑STL͒. STM reveals that the overgrowth is highly uneven, in which elongated Ga x In 1Ϫx P islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong Ga x In 1Ϫx P peak at an energy below the emission from the Ga x In 1Ϫx P barrier material.

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Section: Discussionsupporting

confidence: 88%

“…Further details of the growth have been presented elsewhere. 19,20 To enhance surface properties for STM and STL measurements, the samples were sulphur passivated by immersion into a 2% ammonium sulphide solution kept at 55°C for 30 min. The samples were then baked at 120°C for 12 h in the load lock before transfer into the UHV chamber.…”

Section: Methodsmentioning

confidence: 99%

Quantum-dot-induced ordering inGaxIn1−xP/

et al. 2002

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“…higher levels of self-ordering in other words, has been observed before in 3D InP islands on (Ga,In)P, which was lattice matched to GaAs, as a result of the deposition of a GaP layer in the ML range 23 . As in our case, the formation of smaller and less isotropically shaped 3D islands was suppressed in favor of the formation of larger and more isotropically shaped 3D…”

Section: Resultsmentioning

confidence: 53%

Self-ordered CdSe quantum dots in ZnSe and (Zn, Mn)Se Matrices Assessed by transmission electron microscopy and photoluminescence spectroscopy

Möck

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Browning

et al. 2001

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Single and multilayer sheets of self-assembled CdSe (QDs) were grown by means of molecular beam epitaxy in both ZnSe and (Zn 0.9 Mn 0.1 )Se matrices. Both types of structures were assessed by means of transmission electron microscopy in the scanning, high-resolution, and diffraction-contrast modes.Complementary results from wider sample areas were obtained by means of photoluminescence spectroscopy. In one of the samples analyzed, a fractional monolayer of MnSe was deposited immediately before the CdSe deposition. A second structure grown under identical conditions, but without the MnSe fractional monolayer was also analyzed. This comparison provides direct evidence for an enhanced size and shape homogeneity of 3D QDs caused by the presence of a tiny amount of MnSe at the interface. In the multilayer structure, we observed the co-existence of highly strained quasi-2D QDs and CdSe rich aggregates with compositional modulations on certain crystallographic planes in close proximity.

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“…Another growth parameter widely used in literature to tune the QD emission by controlling the QD size has been the growth interruption (GI). Several experimental and theoretical studies are available on the influence of GI on the morphological and optical properties in the In(Ga)As/ GaAs QD systems [10,[13][14][15][16][17][18][19][20][21]. The general trend emerging from these studies is that, when the material supply is interrupted after the deposition of few In(Ga)As monolayers, the total volume of the dots increases with the interruption time.…”

Section: Introductionmentioning

confidence: 99%