Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

Verreck, Devin; Verhulst, Anne S.; Sorée, Bart; Collaert, N.; Mocuta, A.; Thean, Aaron; Groeseneken, G.

doi:10.1063/1.4904712

Cited by 20 publications

(18 citation statements)

References 18 publications

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“…Therefore, in the ballistic limit, once the VB edge of C2 falls below the source CB edge, source-side tunneling ceases. A similar phenomenon has been observed in the quantum simulations of accumulation layers in pocket-doped TFETs [15].…”

Section: Device Simulation and Discussionsupporting

confidence: 82%

“…Inclusion of inelastic scattering may therefore increase the OFF-state leakage current by allowing parasitic tunneling through the localized states in C1. We have not considered these processes in this paper owing to the substantially greater computational requirements of multiband NEGF simulations with phonon scattering; further work is needed to quantify and assess these effects, which will be relevant for GISTFETs as well as for other types of TFETs where localized accumulation regions appear [15]. Qualitatively, we expect these effects to be less important in III-V GISTFETs with narrow C1 channel lengths and high mobilities because of a weaker electronphonon coupling.…”

Section: Device Simulation and Discussionmentioning

confidence: 99%

“…These are of course also the general directions in which most transistor geometries are moving. By contrast, electrically active doping concentrations are not easily scalable and may even be reduced from their bulk values in nanostructures [4], making doping-centric concepts for improving tunneling performance more difficult to implement [15]. We note that in isolation, body thickness scaling in TFETs and GISTFETs may be counterproductive past a certain point, because size quantization effects will increase the bandgap E g,QCD and will reduce tunneling [16].…”

Section: Device Conceptmentioning

confidence: 92%

See 2 more Smart Citations

Gate-Induced Source Tunneling FET (GISTFET)

Pan

Chui

2015

IEEE Trans. Electron Devices

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We propose a device, the gate-induced source tunneling FET (GISTFET), that uses two gate work functions to modulate lateral tunneling. The performance of the device is largely independent of the details of the chemical doping profile, potentially freeing device design from issues related to solid solubility, junction abruptness, and dopant variability. We demonstrate the advantages of the device over conventional TFETs using ballistic quantum transport simulations and discuss the possible role of scattering. The proposed device can be used to make all types of tunneling devices, but is particularly important for enabling steep swing, high current p-type transistors.

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Section: Device Simulation and Discussionsupporting

confidence: 82%

Section: Device Simulation and Discussionmentioning

confidence: 99%

Section: Device Conceptmentioning

confidence: 92%

See 1 more Smart Citation

Gate-Induced Source Tunneling FET (GISTFET)

Pan

Chui

2015

IEEE Trans. Electron Devices

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“…The 3HJ TFETs are thus very promising in future fast low-power computing applications. The model developed in this work can be used to study the effects of carrier thermalization and serial resistance in a variety of highcurrent TFETs, especially those featuring a potential notch in the source [5], [30], [31].…”

Section: Discussionmentioning

confidence: 99%

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

Huang

Long

Povolotskyi

et al. 2017

IEEE Trans. Electron Devices

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A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission resonances that significantly improve the ON-state current ($I_{\rm{ON}}$). Coherent quantum transport simulation predicts, that $I_{\rm{ON}}=460\rm{\mu A/\mu m}$ can be achieved at gate length $Lg=15\rm{nm}$, supply voltage $V_{\rm{DD}}=0.3\rm{V}$, and OFF-state current $I_{\rm{OFF}}=1\rm{nA/\mu m}$. However, strong electron-phonon and electron-electron scattering in the heavily doped leads implies, that the 3HJ devices operate far from the ideal coherent limit. In this study, such scattering effects are assessed by a newly developed multiscale transport model, which combines the ballistic non-equilibrium Green's function method for the channel and the drift-diffusion scattering method for the leads. Simulation results show that the thermalizing scattering in the leads both degrades the 3HJ TFET's subthreshold swing through scattering induced leakage and reduces the turn-on current through the access resistance. Assuming bulk scattering rates and carrier mobilities, the $I_{\rm{ON}}$ is dropped from $460\rm{\mu A/\mu m}$ down to $254\rm{\mu A/\mu m}$, which is still much larger than the single HJ TFET case

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“…2,3 However, the device exhibits low drain current characteristics because of band-to-band tunneling (BTBT) mechanism which could not meet the ITRS requirement. Recently, a number of techniques such as use of low band-gap material in the source, 6,7 hetero-gate dielectric engineering, 8 hetero-junction mechanism, 9,10 gate-to-source overlap, 11 gate-to-drain overlap, 12 and pocket doping engineering [13][14][15][16][17][18][19] have been proposed by researchers to overcome the low drain current issue. Out of the several methods, the pocket doping engineering (introducing highly doped delta layer in the source) exhibits significant improvement in drain current and switching ratio with proper selection of position of pocket layer in the source.…”

Section: Introductionmentioning

confidence: 99%

Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Dash

Lenka

Jena

et al. 2017

Int J Numerical Modelling

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The paper presents a cylindrical gate tunnel (CGT) field effect transistors (FETs) with a highly doped pocket layer introduced in the source region. The presence of pocket doped layer in the source provides higher lateral electric field and band‐to‐band tunneling (BTBT) generation rate in the vicinity of tunneling junction which in turn increases the drain current and transconductance significantly. Also, the linearity and radio frequency (RF) performance of the CGT FET with source pocket doping (CGTS) have been extensively investigated. The different linearity and RF figure of merits such as gmn, VIP2, VIP3, IIP3, ZCP, 1‐dB compression point, GBWP, TFP, unity gain cut‐off frequency, and maximum oscillation frequency of the present device are extracted and compared with the results of conventional CGT. The results exhibit superior linearity and RF performance along with improved current carrying capability of the proposed device. Thus, the device can be one of the possible contenders to replace bulk MOSFET in high‐frequency microwave applications. The accuracy of both the devices is validated by TCAD Sentaurus simulator.

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Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

Cited by 20 publications

References 18 publications

Gate-Induced Source Tunneling FET (GISTFET)

Gate-Induced Source Tunneling FET (GISTFET)

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

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