Improved technique for voltage measurement using the scanning-electron microscope

Flemming,; Ward, Michael D.

doi:10.1049/el:19700005

Cited by 4 publications

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Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope

Waldrop

Harris

1975

Journal of Applied Physics

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Auger electron spectroscopy in an ultrahigh-vacuum scanning electron microscope is shown capable of the direct and quantitative measurement of potential profiles across biased semiconductor junctions. Profiles are obtained with submicron spatial resolution and subvolt potential resolution by measuring shifts of an Auger electron peak across a semiconductor device as a function of surface potential and spatial position. Experimental results on a GaAs p+-n junction diode for values of reverse bias between 5 and 25 V are in agreement with the potential profiles predicted by the depletion approximation model of a p-n junction.

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Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope

Waldrop

Harris

1975

Journal of Applied Physics

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Local field effects on voltage contrast in the scanning electron microscope

Nakamae

Fujioka

Ura

1981

J. Phys. D: Appl. Phys.

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The local field effects on voltage contrast in the scanning electron microscope (SEM) mean that local fields generated by a non-uniform potential distribution on specimen surface cause a variation in the secondary electron (SE) detector current. It causes some errors in the voltage measurement. The authors present a theory to calculate the SE detector current in the presence of the local fields. In the calculation, they assume that the field distribution above the specimen surface (metal electrodes with 8 mu m width and 12 mu m separation) is two-dimensional. Analysed models are a conventional SEM detector system (model A), a retarding-field energy analyser with an extraction field (model B) and a high-resolution energy analyser with an extraction field (model C). The results show that the local field effects could not be neglected even in models B and C with strong extraction fields. The calculated values of local field effects in models A and B agree well with the experimental ones. The dependence of local field effects on the electrode geometry is equivalent to that on the extraction field, though this dependency is not so strong.

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A new hemispherical retarding field energy analyser for quantitative voltage measurements in the SEM

Nakamae¹,

Fujioka²,

Ura³

1985

J. Phys. E: Sci. Instrum.

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Improved technique for voltage measurement using the scanning-electron microscope

Cited by 4 publications

References 0 publications

Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope

Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope

Local field effects on voltage contrast in the scanning electron microscope

A new hemispherical retarding field energy analyser for quantitative voltage measurements in the SEM

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