1975
DOI: 10.1063/1.321587
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Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope

Abstract: Auger electron spectroscopy in an ultrahigh-vacuum scanning electron microscope is shown capable of the direct and quantitative measurement of potential profiles across biased semiconductor junctions. Profiles are obtained with submicron spatial resolution and subvolt potential resolution by measuring shifts of an Auger electron peak across a semiconductor device as a function of surface potential and spatial position. Experimental results on a GaAs p+-n junction diode for values of reverse bias between 5 and … Show more

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Cited by 10 publications
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“…These field strengths correspond to reverse voltages of 500V and 800V, respectively, on our diode. Electron-beam potential profiling above these values for state-of-the-art reverse voltages in PSCD necessitates AE detection and more expensive apparatus (Commizoli andOpila 1987, Waldrop andHarris 1975). In addition, the reduction in signal between SE and AE may reduce the achievable voltage resolution.…”
Section: Performancementioning
confidence: 99%
“…These field strengths correspond to reverse voltages of 500V and 800V, respectively, on our diode. Electron-beam potential profiling above these values for state-of-the-art reverse voltages in PSCD necessitates AE detection and more expensive apparatus (Commizoli andOpila 1987, Waldrop andHarris 1975). In addition, the reduction in signal between SE and AE may reduce the achievable voltage resolution.…”
Section: Performancementioning
confidence: 99%