Electron‐beam test on power semiconductor devices

Steck, M.; Herrmann, K.; Kubalek, E.

doi:10.1002/sca.4950100406

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…There is a limit of applied extraction field strength, however. due to flashovers inside the analyser (Steck et al 1988). Thus the formation ofa potential harrier is still a problem for the potential measurement in power devices.…”

Section: I+ _-+ :-A-"and:--c a Amentioning

confidence: 99%

Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe

Nakamae

Komukai

Fujioka

1995

Semicond. Sci. Technol.

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Potentials on the floating guard rings in a power vertical-channel double-diffused MOS(VDMOS) transistor were measured for the first time using an electron-beam probing system which incorporates a hemispherical retarding field energy analyser. Problems in measuring the potential on the VDMOS by an electron beam probe are that strong local fields on the specimen cause the primary electron beam to shifl from t h e target position and depress the saturation level of the S curve due to formation of a potential barrier in front of the specimen. In the measurement procedure the primary electron beam shift is corrected by measuring the shift each time an experimental condition is changed. The influence of depression in the saturation level of the S curve is eliminated by setting the slice level of the S curve at a low level of less than the maximum depressed saturation level. Measured results well reflect the function of the floating guard ring structure

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Section: I+ _-+ :-A-"and:--c a Amentioning

confidence: 99%

Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe

Nakamae

Komukai

Fujioka

1995

Semicond. Sci. Technol.

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Measurement of potential distributions on positive-temperature-coefficient resistors by an electron-beam probe

Nakamae

Tanimoto

Fujioka

et al. 1991

Meas. Sci. Technol.

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Potential distributions in overcurrent protection operation of two different positive-temperature-coefficient (PTC) resistors, A and B, with a driving voltage of the order of 100 V were measured by an electron-beam probe in the scanning electron microscope. The measurement accuracy of the specimen potential was 0.7 V (the standard deviation) in the range from -70 to 70 V. Measured potential distributions for two kinds of PTC resistor showed that the maximum electric field strength in one resistor increased with the driving voltage VD, while that in the other resistor had a tendency to be saturated in the range of VD greater than 30 V.

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Electron‐beam test on power semiconductor devices

Cited by 2 publications

References 9 publications

Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe

Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe

Measurement of potential distributions on positive-temperature-coefficient resistors by an electron-beam probe

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