Measurement of potential distributions on positive-temperature-coefficient resistors by an electron-beam probe

Nakamae, Koji; Tanimoto, H.; Fujioka, Hiromu; Ura, Katsumi

doi:10.1088/0957-0233/2/6/006

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1992

1995

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“…The measurement system used in this work is the same as in a previous paper (Nakamae et al 1991). Figure 3 shows the arrangement of the hemispherical retarding field analyser and the VDMDS.…”

Section: Measurement Systemmentioning

confidence: 99%

Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe

Nakamae

Komukai

Fujioka

1995

Semicond. Sci. Technol.

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Potentials on the floating guard rings in a power vertical-channel double-diffused MOS(VDMOS) transistor were measured for the first time using an electron-beam probing system which incorporates a hemispherical retarding field energy analyser. Problems in measuring the potential on the VDMOS by an electron beam probe are that strong local fields on the specimen cause the primary electron beam to shifl from t h e target position and depress the saturation level of the S curve due to formation of a potential barrier in front of the specimen. In the measurement procedure the primary electron beam shift is corrected by measuring the shift each time an experimental condition is changed. The influence of depression in the saturation level of the S curve is eliminated by setting the slice level of the S curve at a low level of less than the maximum depressed saturation level. Measured results well reflect the function of the floating guard ring structure

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Section: Measurement Systemmentioning

confidence: 99%