Improved Thermal Performance of SOI Using a Compound Buried Layer

Baine, Paul; Montgomery, Jenny; Armstrong, B.M.; Gamble, Harold; Harrington, S. J.; Wilson, Robin; Oo, Kean Beng; Armstrong, Alastair G.; Suder, Suli

doi:10.1109/ted.2014.2318832

Cited by 10 publications

(2 citation statements)

References 10 publications

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“…The problem is exacerbated by the required thicker BOX in analog and mixed-signal applications than in digital CMOS to reduce noise coupling [111][112][113]. Techniques to reduce the thermal resistance in SOI-like substrates are described in [114,115].…”

Section: Self-heating and Temperature Effectsmentioning

confidence: 99%

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

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This chapter focuses mainly on the drain-extended MOS transistor, DEMOS, for high voltage applications, and on the lateral double-diffused MOS transistor, LDMOS, for high power applications. In both cases, the drain is extended with a lightly-doped region, referred to as the drift region, to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is then analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications. IntroductionThe MOSFETs discussed in Chap. 6 are designed for digital, analog, mixed-signal, and RF applications that operate in the low-to-medium voltage range of about 0.8-6 V. Many analog applications, however, require transistors that can handle voltages above 20 V and currents in the ampere range. Those transistors are referred to as high-voltage and power transistors. This chapter provides a comprehensive analysis of the drain-extended MOS transistor (DEMOS), for high-voltage and low-current applications, and the lateral double-diffused MOS (LDMOS) transistor, LDMOS, for power applications. (The "D" in LDMOS describes the sequential (double) diffusion of boron and arsenic through the same oxide opening, defining a precise channel length (Chap. 9). The "L" means that the current path is parallel to the silicon surface (lateral), as opposed to "V" in VDMOS where the current is nearly vertical to the silicon surface.) Schematic cross sections of both transistors (Table 7.1). The DEMOS is typically processed without added process complexity, whereas the LDMOS requires optimization of the P-body and N-drift regions to achieve high voltages and currents while minimizing the drain-to-source resistance and transistor area.The interest in bipolar, CMOS, and DMOS (BCD) technologies has been driven primarily by the proliferation of portable electronics, automotive electronics, and the need for energy efficiency. These applications cluster around different operating points, with 24 V for portable electronics; 60 V for automotive, solar, and LED backlighting; 85 V for power over Ethernet; 120 V for telecommunication; and 700 V for offline LED lighting, consumer, and industrial applications. As a result, BCD is now the technology of choice to realize power ICs by most integrated device manufacturers (IDM) and foundries [1][2][3][4][5].This chapter focuses mainly on transistors with voltage capabilities in the range of 20-700 V, where the bulk of the product applications lie.

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Section: Self-heating and Temperature Effectsmentioning

confidence: 99%

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

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“…One way to reduce the impact of these problems is to develop a structure that exploits the benefits of both bulk-Si and silicon-on-insulator (SOI) substrates, a solution with good heat conduction and electrical insulation, respectively. Examples like this are partial SOI [3], [4], compound buried layers [5], [6], silicon on sapphire [7], and silicon on aluminum nitride [8], [9]. Nevertheless, their heat transfer abilities do not break the Si limit and in this respect, the bulk-Si solution has thermal advantage over the others.…”

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Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Chan

Sanchez

et al. 2017

IEEE Trans. Electron Devices

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2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. Permanent WRAP URL:Abstract -This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300°C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an offstate leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to −200 V, which behaves similar to the bulk-Si LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided Design simulations.Index Terms-High-temperature operation, Power LDMOSFETs, reduced surface electric field (RESURF), semiconductor device modeling, silicon carbide, siliconon-insulator technology, silicon-on-silicon carbide.

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High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2019

Silicon Analog Components

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Improved Thermal Performance of SOI Using a Compound Buried Layer

Cited by 10 publications

References 10 publications

High-Voltage and Power Transistors

High-Voltage and Power Transistors

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

High-Voltage and Power Transistors

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