Improved thermoelectric performance of Nb-doped lead selenide

Han, Yi; Chen, Zhen; Xin, Caini; Pei, Yanzhong; Zhou, Min; Huang, Rongjin; Li, Laifeng

doi:10.1016/j.jallcom.2014.02.077

Cited by 22 publications

(7 citation statements)

References 30 publications

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“…Rare-earth elements have also been used for PbTe 36,37 or PbSe, 38,39 we found in PbSe their doping efficiency is very low 39 (about 5% from charge counting for La) thus the results are not included. Doping of PbSe with transition metal Nb has also been reported 40 where the study found a signicant change of effective mass, presumably due to change in band structure, so this result is not compared.…”

Section: Resultsmentioning

confidence: 99%

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Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

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In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped PbSe by studying n-type samples doped with Br, In and Bi. We propose that cation and anion dopants lead to a difference in mobility at high concentrations. This can be understood considering the predominance of cation states to the conduction band and anion states to the valence band. For higher mobility and better performance for most applications of heavily doped semiconductors, dopants should be on the site that is of less influence on the chargeconducting band. This concept can be viewed as an analog of modulation doping on the atomic level. Its physical origin is the random potential due to disorder that perturbs carriers, which is also the origin of Anderson localization at low temperature, a well-studied topic in theoretical physics. In thermoelectric PbSe, the selection of dopant can lead to 10% difference in mobility and in zT.

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Section: Resultsmentioning

confidence: 99%

“…Doping of PbSe with transition metal Nb has also been reported 40 where the study found a signicant change of effective mass, presumably due to change in band structure, so this result is not compared.…”

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confidence: 99%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

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“…To improve thermoelectric performance, several approaches can be adapted, such as: carrier concentration tuning [1][2][3][4] and band modication 2,5-7 for optimizing electrical properties; alloying effect, 2,8 in situ nanostructure, 9,10 second phase 11 and solid solution 12 for decreasing k L . [13][14][15][16] Forming a solid solution has been successfully applied in many thermoelectric materials such as Si 1Àx Ge x , [17][18][19] Mg 2 Si 1Àx Sn x , [20][21][22] Bi 2Àx Sb x Te 3 (ref.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric performance of SnS and SnS–SnSe solid solution

et al. 2015

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Solid solution is a potential way to optimize thermoelectric performance for its low thermal conductivity compared to those of the constituent compounds because of the phonon scattering from disordered atoms. Tin(II) sulfide (SnS) shows analogous band structure and electrical properties with tin selenide (SnSe), which was the motivation for investigating the thermoelectric performance of SnS and SnS-SnSe solid solution system. SnS compound and SnS 1Àx Se x (0 < x < 1) solid solution were fabricated using the melting method and they exhibited anisotropic thermoelectric performance along the parallel and perpendicular to the pressing directions. For the SnS compound, the maximum zT k value is 0.19 at 823 K along the parallel to pressing direction, which is higher than that along the perpendicular to the pressing direction (zT t ¼ 0.16). The zT values of SnS 0.5 Se 0.5 and SnS 0.2 Se 0.8 were higher than those of the SnS compound and a maximum zT value of 0.82 was obtained for SnS 0.2 Se 0.8 at 823 K, which is more than four times higher than that of SnS.

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“…[2][3][4] Lead selenide (PbSe, space group Fm% 3m), a direct-gap semiconductor, has been studied for decades mainly with a focus on its excellent optical properties. 5,6 Recently, some investigations have been devoted to its thermoelectric performance [7][8][9][10][11][12][13][14][15][16][17] due to its low lattice thermal conductivity and the earth-abundant elemental compositions compared with PbTe, a traditional thermoelectric compound. 8,16,18,19 Raising ZT values is the ultimate task, which is of particular importance for new thermoelectric materials including PbSe.…”

Section: Introductionmentioning

confidence: 99%

Electrical and thermal transport properties of Pb_1−xSn_xSe solid solution thermoelectric materials

Wei

2015

Phys. Chem. Chem. Phys.

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Both lead selenide (PbSe) and tin selenide (SnSe) are promising thermoelectric compounds consisting of earth-abundant elements, between which solid solutions can be formed over a wide composition range. This study investigated the electrical and thermal transport properties of n-type Pb1-xSnxSe (x = 0, 0.01, 0.05, 0.1 and 0.15) solid solutions with emphasis on the effect of Sn substitution. Small amounts of Sn substitution (x ≤ 0.1) increased electrical conductivity but showed less influence on the Seebeck coefficient, leading to improved power factors, which were revealed to be associated with the generation of native Se vacancies. The electrical conductivity tended to decrease when x > 0.1 due to the alloying effect, consequently the thermoelectric figure of merit was not further increased, even though the thermal conductivity can be reduced by increasing Sn content. A maximum dimensionless figure of merit ZT of up to 1.0 was obtained at moderate temperature (773 K) for the composition of Pb0.9Sn0.1Se.

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Improved thermoelectric performance of Nb-doped lead selenide

Cited by 22 publications

References 30 publications

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Thermoelectric performance of SnS and SnS–SnSe solid solution

Electrical and thermal transport properties of Pb_1−xSn_xSe solid solution thermoelectric materials

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Improved thermoelectric performance of Nb-doped lead selenide

Cited by 22 publications

References 30 publications

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Thermoelectric performance of SnS and SnS–SnSe solid solution

Electrical and thermal transport properties of Pb1−xSnxSe solid solution thermoelectric materials

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Electrical and thermal transport properties of Pb_1−xSn_xSe solid solution thermoelectric materials