Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A film grown on a (001) DyScO 3 substrate exhibited a mobility of 183 cm 2 ·V -1 ·s -1 at room temperature and 400 cm 2 ·V -1 ·s -1 at 10 K, despite the high concentration (1.2×10 11 cm -2 ) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO) 2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects-possibly (BaO) 2 crystallographic shear defects or point defects-significantly reduce the electron mobility.
Narrowing the mechanical mismatch between biological tissues (typically soft) and neural interfaces (hard) is essential for maintaining signal quality for the electrical recording of neural activity. However, only a few materials can satisfy all requirements for such electronics, which need to be both biocompatible and sufficiently soft. Here, a highly stretchable electrode array (SEA) is introduced, based on the liquid metal–polymer conductor (MPC), achieving high mechanical flexibility and good cytocompatability for neural interfaces. By utilizing the MPC, the SEA exhibits high stretchability (≈100%) and excellent cycling stability (>400 cycles). The cytocompatability of the SEA can allow for long‐term culturing of primary neurons and enable signal recording of primary hippocampal neurons. In the future, the SEA could serve as a reliable and robust platform for diagnostics in neuronal tissues and greatly advance brain–machine interfaces.
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