Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei

doi:10.1039/c2ra22170e

Cited by 27 publications

(27 citation statements)

References 14 publications

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“…3, process II), greatly facilitate the etching process. 23,24 Process II and III actually determine ER. For process II, there are mainly two individual component (I TE,D and I T ) responsible for the electron transportation over ᭝U, as written in the following:…”

Section: Discussion: Mechanism For N-polar Gan Etchingmentioning

confidence: 99%

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Wang¹,

Ma²,

Liu³

et al. 2013

Journal of Applied Physics

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N-polar GaN etching process and mechanism has been investigated in detail by varying the etching parameter (etchant temperature, etchant concentration, and etching duration) in KOH and H3PO4. Quasi-perfect micro-scale hexagonal pyramids vertical light emitting diodes (μ-HP VLEDs) array with least active area loss (<12%) has been fabricated by N-polar etching. The μ-HP VLEDs shows massively improved crystal quality with X-ray diffraction full width at half maxima decreased from 442 s to 273 s, and the room temperature minority carriers decay time increased from 252 ps to 747 ps. Temperature dependence of photoluminescence result reveals a ∼30% improved internal quantum efficiency, and transmission electron microscope further reveals its quasi-perfect crystalline quality clearly.

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Section: Discussion: Mechanism For N-polar Gan Etchingmentioning

confidence: 99%

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Wang¹,

Ma²,

Liu³

et al. 2013

Journal of Applied Physics

Self Cite

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“…GaN is one of the most promising wide bandgap semiconductors for applications in optoelectronic and other electronic devices such as light-emitting diodes, laser diodes, solar cells, and high-electron-mobility transistors [95][96][97][98][99]. The transparency of metal oxide conductors is poor in the UV and near UV region, which affects the photodetectors efficiency and brightness of LEDs.…”

Section: Graphene-gan Heterostructurementioning

confidence: 99%

“…However, diffusion of the metal into semiconductor at elevated temperatures enhances the tunneling of the carriers across the barrier, causing a decrease in thermionic emission current, i.e., lowering of the barrier and hence restricts the high temperature operation of the device. Graphene has been combined with n and p type GaN in lateral and vertical heterostructure to fabricate light emitting diode and photodetectors ( Figure 10) [98]. The fabrication of light emitting diode has been demonstrated using a tunnel junction configuration such as graphene/n-In…”

Section: Graphene-gan Heterostructurementioning

confidence: 99%

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

Kalita¹,

Tanemura²

2017

Graphene Materials - Advanced Applications

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Graphene, the atomically thin sheet of sp 2 hybridized carbon atoms arranged in honeycomb structure, is becoming the forefront of material research. The chemical vapor deposition (CVD) process has been explored significantly to synthesis large size single crystals and uniform films of monolayer and bilayer graphene. In this prospect, the nucleation and growth mechanism of graphene on a catalytic substrate play the fundamental role on the control growth of layers and large domain. The transition metals and their alloys have been recognized as the active catalyst for growth of monolayer and bilayer graphene, where the surface composition of such catalysts also plays critical role on graphene growth. CVD-synthesized graphene has been integrated with bulk semiconductors such as Si and GaN for the fabrication of solar cells, photodetectors, and lightemitting diodes. Furthermore, CVD graphene has been integrated with hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) for the fabrication of van der Waals heterostructure for nanoelectronic, optoelectronic, energy devices, and other emerging technologies. The fundamental of the graphene growth process by a CVD technique and various emerging applications in heterostructure devices is discussed in detail.

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“…It is well known that GQDs exhibit a lower work function (~3.7 eV) than that of many semiconductors such as GaAs, GaN, Si, and TiO 2 1314. This property enables the charge carriers in GQDs to transfer into the semiconductors since the LUMO level of GQDs is higher than that of the conduction band of the semiconductors.…”

mentioning

confidence: 99%

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Lin

Santiago

Zheng

et al. 2016

Sci Rep

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Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

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Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Cited by 27 publications

References 14 publications

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Fundamentals of Chemical Vapor Deposited Graphene and Emerging Applications

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

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