N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong

doi:10.1063/1.4823849

Cited by 25 publications

(33 citation statements)

References 30 publications

(32 reference statements)

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“…A maximum etching velocity of 500 Å min −1 was achieved at 80 °C. This value is 25 times higher than the previous one, which is also in agreement with the experiments performed by Wang and co‐workers . The maximum observed average pyramid base size during etching at 90 °C was reached after 40 min.…”

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionssupporting

confidence: 92%

“…Similarly, Wang and co‐workers reported the pyramids’ average base diameter to increase linearly up to a KOH concentration of ∼1 m . Hereby, the conditions were different with an etching period of 30 min and a temperature of 60 °C.…”

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 77%

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

“…Wang and co‐workers applied etching in 2 m KOH at temperatures between 60 and 90 °C for a prolonged period of 180 min during their investigations . After reaching a maximum, the pyramid size decreased rapidly in a linear manner.…”

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

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Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of the product. Wet‐chemical etching of GaN is commonly carried out by treatment with aqueous KOH solution at elevated temperature. Thereby, the anisotropic etching results in a highly rough surface. Hence, a remarkably higher out‐coupling possibility of generated photons is feasible. On the other hand, anisotropy generally prohibits the application of a predictable and standardized etching process. In this review, both material‐ and process‐dependent influences on the etching performance in aqueous KOH solution are classified. Herein, we critically present the factors that affect the etching rate of GaN. Moreover, the etching mechanism at the molecular level and the generation of anisotropy from the hexagonal crystal lattice are discussed. The existing gaps in the current understanding of this process maintain the field still open for further research aligned to a permanent interest of the electronic industry.

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Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionssupporting

confidence: 92%

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 77%

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

See 2 more Smart Citations

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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“…The development of GaN nanostructure by wet etching (a). 67 Reproduced from Ref. [67], with the permission of AIP Publishing.…”

Section: Nitrides Nano-structuresmentioning

confidence: 99%

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Li¹,

Liu²,

Yi³

et al. 2017

III-Nitride Materials, Devices and Nano-Structures

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Even though III-Nitrides have demonstrated their ample application in solid-state light, display, laser, detector and high-power RF/switching device, many other new breakthroughs on fundamental physics and fabrication techniques are still highly desired to lead to their next expansion of the research and application field in the near future. In this chapter, the general properties of III-nitrides as well as their ternary and quaternary were briefly reviewed. Specifically, we mainly focused on the underlying physics of p doping challenge, nitrides nano-structures and their application on LEDs. We presented an overview of some main results and progress in highly effective p doping for nitrides. Some promising strategies to address the issue of p doping challenge were also introduced. Furthermore, we describe the prevailing GaN nanowire fabrication methods including wet etching and selective area growth and their application in novel LED structures.

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Neue Wege: LED effizienter machen

Tautz¹,

Díaz²

2022

Nachr Chem

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N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Cited by 25 publications

References 30 publications

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Neue Wege: LED effizienter machen

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