Improved tunneling controlled field emission of Boron carbon nitride nanofilm

Electron field emission characteristics of boron nanowires grown by ultralow pressure CVD

“…Another way of improving the field emission performance is by doping CNTs with other substitutional impurities such as boron or nitrogen atoms. It has been proven that boron or nitrogen can modify the band structure of carbon nanomaterials; [16][17][18] thus, doped impurities of boron or nitrogen atoms markedly affect the electronic properties of doping carbon nanomaterials, for example, metallic nitrogen-doped CNTs, which have shown better performance than primitive CNTs. 19) Since some boron-containing compounds can help the electron field emission, field emitters using boron nanowires (BNWs) with a low electron affinity (EA) 20) and a high aspect ratio become a thought-provoking issue.…”

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

“…During the last 10 years a group from Osaka University, Japan, studies intensively the PECVD synthesis from BCl 3 +CH 4 +N 2 +H 2 mixtures and the properties of BC x N y films. The BC x N y films produced at 650°C were polycrystalline (Aoki et al, 2007(Aoki et al, , 2008a(Aoki et al, , 2008b(Aoki et al, , 2009a(Aoki et al, , 2009b(Aoki et al, , 2009c(Aoki et al, , 2009dEtou, et al, 2002;Kimura, et al, 2005Kimura, et al, , 2009Mazumder et al, 2009;Nesládek et al, 2001;Okada et al, 2006;Shimada et al, 2006;Sugino & Hieda, 2000;Sugino et al, 2000Sugino et al, , 2002Sugino et al, , 2008Sugino et al, , 2010Sugiyama et al, 2003Sugiyama et al, , 2002Tai et al, 2003;Umeda et al, 2004;Watanabe et al, 2008;Yuki et al, 2004;Zhang et al, 2005).…”