Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Kim, Yeo-Myeong; Kang, Hyun Seo; Kim, Gi‐Heon; Hwang, Chi‐Sun; Yoon, Sung‐Min

doi:10.1109/led.2017.2736000

Cited by 60 publications

(39 citation statements)

References 9 publications

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“…IGZO film could also be deposited by ALD. [62] ALD has an advantage of conformal deposition, but the process is slow and difficult to vary the chemical composition. Besides, solutionprocessed IGZO has potential to reach lower cost than vacuum deposition methods, [63] but it still requires a high-temperature (>350 C) or photochemical activation (e.g., deep-ultraviolet irradiation) process [64] to achieve a stable and dense solid structure with reasonable electrical performance and operating stability.…”

Section: Igzo Channel Layermentioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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Section: Igzo Channel Layermentioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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“…In most cases this has taken the form of solution processing methods such as spin coating, inkjet printing, or spray pyrolysis [137][138][139][140] . There is also a growing body of work using spatial atomic layer deposition (S-ALD) that began in 2015 with work from Illiberi et al 141 and has expanded to several research groups in the last few years [142][143][144][145] . in large area and roll-to-roll processing, it remains very much a developing area with significant challenges, and is partially reviewed in the recent work from Sheng et al 145 .…”

Section: Deposition Techniques For A-igzomentioning

confidence: 99%

“…This design has come to attention as the push for reduced device footprint has forced researchers to consider alternatives to planar geometries 5 . Here the channel is defined by the thickness of a device layer, commonly an additional dielectric layer as in figure 5h) 143,[178][179][180][181] , although the channel can also be defined by the thickness of the gate or the semiconductor itself [182][183][184][185] . This approach is currently very new and only a small amount of work on it exisists.…”

Section: Vertical Tftsmentioning

confidence: 99%

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

2019

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“…Since the first report on indium-gallium-zinc oxide thin-film transistors (TFTs) by Nomura et al in 2004, oxide semiconductor TFTs have drawn significant attention owing to their high electrical performance, low fabrication temperature, and superior large area uniformity [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. To date, a variety of oxide semiconductors have been developed to enhance the electrical performance and stability of oxide TFTs [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ]. However, fabricating p-channel oxide TFTs consisting of electrical performance comparable to that of n-channel oxide TFTs remain a challenge.…”

Section: Introductionmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Cited by 60 publications

References 9 publications

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

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