Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation

Lu, Dian-Tong; Ryssel, H.

doi:10.1016/s1567-1739(01)00041-4

Cited by 3 publications

(1 citation statement)

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“…In parallel, the requirements for SOI wafer quality become more and more severe and many efforts have been made to realize high quality. Many teams went on with their work with co-implanting ions, such as O + , N + , F + and so on [4][5][6][7][8][9][10][11], to improve the property of the SOI wafer radhardness to harden the SOI devices. However, there have not been any research teams who have studied the relationship between dose of N + ions implanting into separation-byimplantion SIMOX wafer and the microstructure, while the status of the microstructure closely affects the properties, especially the radiation hardness of devices fabricated on the materials.…”

Section: Introductionmentioning

confidence: 99%

Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen

Zhang¹,

Yi²,

Chen³

et al. 2005

Smart Mater. Struct.

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In our work, separation by implantation of oxygen and nitrogen (SIMON) wafers were fabricated with different nitrogen implantation doses and post-annealing. Secondary ion mass spectrometer (SIMS) analysis showed that for the samples with low nitrogen dose some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO 2 interface after annealing, and for the samples with large nitrogen dose distinct delamination appeared between the layer containing the nitrogen element and that containing the oxygen element. The results of the spreading resistance probe (SRP) suggested that a buried insulator was formed for wafers with large nitrogen implantation dose. The results of cross section transmission electron microscopy (XTEM) confirmed the analysis above. The results show that the quality of SIMON materials is closely related to nitrogen implantation parameters.

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Section: Introductionmentioning

confidence: 99%

Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen

Zhang¹,

Yi²,

Chen³

et al. 2005

Smart Mater. Struct.

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Electrical Characterization of Semiconductor Materials and Devices

Deen

Pascal²

2006

Springer Handbook of Electronic and Photonic Materials

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Electrical Characterization of Semiconductor Materials and Devices

Deen¹,

Pascal²

2017

Springer Handbooks

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Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials-semiconductors, conductors and dielectrics-which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

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Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation

Cited by 3 publications

References 4 publications

Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen

Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen

Electrical Characterization of Semiconductor Materials and Devices

Electrical Characterization of Semiconductor Materials and Devices

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