Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V ) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

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In our work, separation by implantation of oxygen and nitrogen (SIMON) wafers were fabricated with different nitrogen implantation doses and post-annealing. Secondary ion mass spectrometer (SIMS) analysis showed that for the samples with low nitrogen dose some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO 2 interface after annealing, and for the samples with large nitrogen dose distinct delamination appeared between the layer containing the nitrogen element and that containing the oxygen element. The results of the spreading resistance probe (SRP) suggested that a buried insulator was formed for wafers with large nitrogen implantation dose. The results of cross section transmission electron microscopy (XTEM) confirmed the analysis above. The results show that the quality of SIMON materials is closely related to nitrogen implantation parameters.

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