Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Abstract

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V ) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

“…For example, the radiation hardened SOI wafers with multilayer buried dielectric, SiO 2 -Si 3 N 4 -SiO 2 , and silicon oxynitride buried layer were prepared respectively by the Zone Melting Recrystallization (ZMR) process and the co-implantation of oxygen and nitrogen, increasing SOI resistance to total-dose radiation damage. [9,10] In recent years, for separation by implanted oxygen (SIMOX) SOI materials, nitrogen and silicon were separately implanted into the buried oxide (BOX) layer to improve BOX radiation hardness. [11−16] However, so far the effects of nitrogen implantation into SIMOX BOX under different conditions on the total dose response of SIMOX SOI wafers have not been studied systematically.…”

“…In addition, compared with hardening methods based on synthesized buried layers like those used in Refs. [9] and [10], the hardening of commercial SIMOX wafer by employing an additional low dose ion implantation into the BOX is much more promising for practical applications for its simpler process,…”

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

“…[5] Yi et al prepared a type of SOI materials by oxygen and nitrogen ions implantation to enhance the radiation tolerance of devices. [6] For SIMOX SOI wafers, Yang, Zhang, Wu and Bi et al researched the hardening method of silicon implantation into BOX. [7−12] Although nitrogen implantation into BOX proved to be another effective method for hardening SIMOX materials, and the impact of nitrogen implantation energy on the radiation tolerance of SIMOX wafers has been discussed in our previous work [13] and by Zhang et al, [14] a systematic and wide research is obviously lacking.…”

Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy

“…Moreover, the buried oxide in SOI wafers limits the total fluence radiation tolerance of SOI materials. To improve the total fluence radiation tolerance for SIMOX SOI wafers, many methods have been explored, for instance, supplemental implants [1][2][3][4][5], multiple implants [6], lowering the implantation fluence of oxygen ions [7] and nitrogen implantation [8,9], etc. Among the measurement methods, MOSFET is the most frequently used.…”