Improvement in the quality of ZnSe epilayers grown on (001) GaAs by the low temperature growth of a thin ZnSe buffer layer

Zhang, X.B; Ha, Kwang; Hark, S. K.

doi:10.1016/s0022-0248(01)01271-4

Cited by 2 publications

(3 citation statements)

References 16 publications

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“…It is also known that small growth hillocks, resulting from 3D growth, can nucleate on imperfections on the interface, such as defects or impurities for several heterostructures (see, e.g., Ref. [39]). As we believe, really small grains of Se-or Cr-related precipitates (like clusters or nanocrystals) can play an active role in the creation and growth of such hillocks on the layer surface.…”

Section: Resultsmentioning

confidence: 99%

Structure characterization of MBE-grown (Zn,Cr)Se layers

Jouanne¹,

Morhange²,

Dynowska³

et al. 2004

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Structure characterization of MBE-grown (Zn,Cr)Se layers

Jouanne¹,

Morhange²,

Dynowska³

et al. 2004

Journal of Alloys and Compounds

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“…10 Hence the structural quality of the epilayer (d) has been greatly improved by initially growing a 28 nm thick buffer layer at low temperature. Lattice mismatch-induced dislocations are often found near the interfacial region of hetero-structures.…”

Section: Resultsmentioning

confidence: 99%

“…10 Since band alignment is very sensitive to both the chemical and structural properties of the interface, the presence of a buffer layer, although chemically the same as the epilayer, would have a significant effect. In this work, we used Raman scattering to probe the interfacial quality and the band alignment of the hetero-structures grown.…”

Section: Introductionmentioning

confidence: 99%

Raman scattering studies of the ZnSe/GaAs interface

Zhang¹,

Tsoi²,

Ha³

et al. 2001

J Raman Spectroscopy

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Raman spectroscopy was used to study the band bending at the interface of ZnSe/GaAs hetero-structures. A series of samples, which contained a ZnSe buffer layer, 0-35 nm thick, grown at a lower temperature than the much thicker ZnSe epilayer, by metal-organic chemical vapor phase deposition, were investigated. Compared with that of the GaAs substrate, an enhancement of the intensity of the LO GaAs phonon was found in samples grown without and with a thick (≥28 nm) buffer layer, but not in a sample grown with a 4 nm thick buffer layer. The enhancement is attributed to the electric field induced Raman scattering, resulted from a strong band bending on the GaAs side of the hetero-structure. The results suggest that the direction of the interfacial electric field on the GaAs side will reverse with increasing buffer layer thickness. Between this reversal, a near flat band condition can be achieved, as was found in a sample grown with a 4 nm buffer layer. This suggestion is consistent with the concomitant improvement of the structure of the epilayer and of the interfacial quality of the hetero-junction, which unpins the Fermi level and affects the band bending.

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Improvement in the quality of ZnSe epilayers grown on (001) GaAs by the low temperature growth of a thin ZnSe buffer layer

Cited by 2 publications

References 16 publications

Structure characterization of MBE-grown (Zn,Cr)Se layers

Structure characterization of MBE-grown (Zn,Cr)Se layers

Raman scattering studies of the ZnSe/GaAs interface

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