Improvement of a microwave ECR plasma source for the plasma immersion ion implantation and deposition process

Abstract

The Plasma Immersion Ion Implantation and Deposition (PIII&D) process has many advantages over the pure plasma immersion ion implantation or deposition. It can compensate for or eliminate the disadvantages of the shallow modification layer (for PIII) and increase the bond strength of the coating (of deposition). For this purpose, a new type of microwave plasma source used in the PIII&D process was developed, composed of a vacuum bend wave guide and a special magnetic circuit, so that the coupling window was protected from being deposited with a coating and bombarded by high-energy particles. So the life of the window is increased. To enhance the bonding between the coating and substrate a new biasing voltage is applied to the work piece so that the implantation and deposition (or hybrid process) can be completed in one vacuum cycle.

Electron cyclotron resonance plasma source with belt-type magnet assembly and slit antennas

“…Electron cyclotron resonance (ECR) plasma sources are widely used for plasma processing such as chemical vapor deposition, physical vapor deposition, sputtering, ion implantation and hyperthermal neutral beam generation [1][2][3][4][5][6][7] because they have several advantages over other plasma sources, such as high plasma density, high ionization efficiency, and a high degree of dissociation of molecules at a low operating pressure.…”