Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE

Shimizu, Y.; Kobayashi, Naoto; Uedono, Akira; Okada, Yoshitaka

doi:10.1016/j.jcrysgro.2004.12.114

Cited by 41 publications

(35 citation statements)

References 10 publications

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“…The GaInNAs films were grown by atomic hydrogenassisted molecular beam epitaxy ͑H-MBE͒ with a radiofrequency ͑rf͒ nitrogen plasma source. 12,13 We found that although the hole mobilities in Be-doped p-GaInNAs films exhibit a temperature dependence that is nearly identical to that for the homoepitaxial p-GaAs films doped with Be, the electron mobilities in Si-doped n-GaInNAs films are strongly correlated with the presence of N and Si atoms.…”

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confidence: 80%

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Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

Miyashita

Shimizu

Okada

2007

Journal of Applied Physics

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We have investigated the electrical properties of GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy. We found that although the hole mobilities in Be-doped p-GaInNAs films exhibit a temperature dependence nearly identical to that for the homoepitaxial p-GaAs films, the electron mobilities in Si-doped n-GaInNAs films are strongly affected by the introduction of nitrogen into Ga͑In͒As. Further, the degree of scattering by the ionized impurity-like centers generated by N atoms decreased with increasing Si doping, while neutral impurity-like scattering became more dominant with increasing Si doping. These results suggest that the decrease of electron mobility and carrier concentration in Si-doped n-GaInNAs films is strongly correlated with the presence of N and Si atoms.

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confidence: 80%

“…12,13 Si and Be, both of which were standard MBE-grade solid sources, were used as n-type and p-type dopants, respectively, and the carrier concentration at 300 K was varied from 2 ϫ 10 16 to 1 ϫ 10 18 cm −3 . The GaInNAs layers of 1 m thickness were grown at a fixed growth temperature of 480°C.…”

Section: Methodsmentioning

confidence: 99%

Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

Miyashita

Shimizu

Okada

2007

Journal of Applied Physics

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“…All growths were done by atomic hydrogen-assisted solid-source molecular beam epitaxy (H-MBE) with a radio frequency (RF) nitrogen plasma source [12,13]. We fabricated multi-stacked InAs/GaNAs QDSC on n + -GaAs (001) substrate as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

High‐density quantum dot superlattice for application to high‐efficiency solar cells

Oshima

Okada

Takata

et al. 2010

Phys. Status Solidi (c)

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We characterized the optical absorption and solar cell characteristics of high‐density InAs self‐assembled quantum dots (QDs) grown on GaAs (001) substrates by atomic hydrogen‐assisted molecular beam epitaxy. The GaNAs material can be used as strain‐compensating layer (SCL) thereby minimizing the net strain, and thus is advantageous for multi‐stacking of InAs QDs structures. As a result, dislocations and coalesced islands were not observed in 100 layer‐stacked QDs. For QD solar cell characterization, the short‐circuit current density of QDSC increases with increasing number of QD stacks, and reaches as high as 26.4 mA/cm2 for 50 layer‐stacked sample under air‐mass 1.5 condition. However, the light absorption by QD superlattice as determined by optical absorption measurements at is limited to ∼ 10% even for 100 layer‐stacked samples. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The other driving force is exclusion, which takes place during the cooling process of the grain. When the temperature of the crystallite lattice decreases, the V O is provided with an escaping tendency from inner bulk to the surface of grains [24,25]. Mathematically, P is used to denote the jump probability of an oxygen defect from a place to a nearby position in unit time.…”

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Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

Liu

Cui

et al. 2016

Appl. Phys. A

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The effects of depletion layer width on the semiconductor gas sensors were investigated based on the gradient-distributed oxygen vacancy model, which provided numerical descriptions for the sensor properties. The potential barrier height, sensor resistance, and response to target gases were simulated to reveal their dependences on the depletion layer width. According to the simulation, it was possible to improve the sensor response by enlarging the width of depletion layer without changing the resistance of the gas sensor under the special circumstance. The different performances between resistance and response could provide a bright expectation that the design and fabrication of gas sensing devices could be economized. The simulation results were validated by the experimental performances of SnO 2 thin film gas sensors, which were prepared by the sol-gel technique. The dependences of sensor properties on depletion layer width were observed to be in agreement with the simulations.

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Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE

Cited by 41 publications

References 10 publications

Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

High‐density quantum dot superlattice for application to high‐efficiency solar cells

Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

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