Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal‐organic vapor phase epitaxy

Abstract

We demonstrated InxGa1‐xN epitaxial growth with InN mole fractions of x = 0.10 to 0.23 on an m‐plane ZnO substrate by metal‐organic vapor phase epitaxy. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m‐plane SiC substrate. The strain of the epilayers was investigated by X‐ray reciprocal space mapping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

“…22 Ga .78 N, and a more similar c-axis thermal expansion coefficient 22 . Moreover, the compressive strain due to the growth on the ZnO underlayer promotes stabilisation of an InGaN compositional phase with enhanced indium content 23,24 . This approach also has the potential for transfer of nano InGaN-GaN structures onto alternative substrates (e.g.…”

“…ZnO substrates offer a number of advantages over c-sapphire, AlN/Si and wurtzite SiC wafers [21]: a lower lattice mismatch with GaN (1.8% versus respectively 16% and 4%), a lattice match with In 0.22 Ga 0.78 N, and a more similar c-axis thermal expansion coefficient [22]. Moreover, the compressive strain due to the growth on the ZnO underlayer promotes stabilization of an InGaN compositional phase with enhanced indium content [23,24]. This approach also has the potential for transfer of nano InGaN-GaN structures onto alternative substrates (e.g.…”