Improvement of Dopant Concentration Control with Acoustic Control System for B-SiGe Epitaxy Deposition

Abstract

Currently, SiGe-B epitaxy is a leading technology to induce strain in PMOS channel and improve the hole mobility to achieve better device performance [1-2]. In practice, we observe that the device performance strongly depends on the dopant concentration, especially boron concentration. It is shown that the Acoustic Control System [ACS] is able to actively respond to instantaneous variations of incoming gas and achieve better dopant control [3]. In this paper, we report reduction of boron concentration variation using ACS technology for SiGe-B epitaxy.

A high-sensitivity compact gas concentration sensor using ultraviolet light absorption with a heating function for a high-precision trimethyl aluminum gas supply system

“…1 is required for precise control of MO gases and in situ chamber gas monitoring. Some sensors based on near-infrared and midinfrared light absorption [8][9][10][11][12] or on ultrasonic methods [13][14][15][16] have been proposed for this purpose. However, the sampling speed and concentration detection limit of the current sensors are not sufficient for precise control of TMA gas.…”

A High Sensitivity and Compact Real Time Gas Concentration Sensor for Semiconductor and Electronic Device Manufacturing Process

“…For high-K materials, the formation process of oxides of Zr and Hf with high dielectric constant is promising, and chemical vapor deposition (CVD), atomic layer deposition(ALD) process by MO gas are studied as various precursors [1]. Various low vapor pressure MO gas supply that is difficult to control supply concentration is generally supplied with bubbling, and an in-line gas concentration of near, mid-infrared absorption system or ultrasonic method has been used for gas concentration control [2][3][4]. Current in-line gas concentration sensor has problems such as responsiveness and multi-gas correspondence.…”