Improvement of DS Grown Mc-Si Ingot for PV Application by Reducing the Thickness of the Bottom Heat Exchanger Block: Numerical Investigation

Sekar, Sugunraj; Aravindan, G.; Manikkam, Srinivasan; Ramasamy, P.

doi:10.1007/s12633-023-02350-5

Cited by 6 publications

(3 citation statements)

References 26 publications

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“…Figure shows the thermal gradient of the grown ingot for different solidified ingots. A previous report article [ 11 ] describes the melt‐crystal interface and temperature distribution of the as‐grown mc‐Si ingot. During the growth process, the quality of the mc‐Si ingot depends on the obtained thermal gradient.…”

Section: Resultsmentioning

confidence: 99%

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Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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The present work is based on the numerical investigation of thermal stress and the dislocation density of the directional solidification (DS) grown multi‐crystalline silicon (mc‐Si) ingot. The heat exchanger block (HEB) plays the main role in the growth process, which decides the thermal stress and melt‐crystal interface of the mc‐Si ingot. The conventional furnace is modified to increase the quality of the mc‐Si ingot. The modification on the conventional furnace is done in the insulation block replaced by 1/3rd of the HEB. The HEB enhances the huge amount of heat extraction from the bottom of the crucible. The von Mises stress, dislocation density, and thermal gradient are analyzed. The thermal stress is reduced by the low thermal gradient influenced by the modified HEB. The modified HEB reduces the von Mises stress and dislocation density. The modified furnace system overcomes the conventional case ingot. The result shows that the modified furnace grown mc‐Si ingot improves the efficiency of the solar cell.

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Section: Resultsmentioning

confidence: 99%

“…The DS furnace consists of graphite heaters, retorts, insulation, quartz crucible, argon gas flow tube, and a side insulation wall. [11,12] In the DS furnace system consists of the three side and top graphite heaters. The simulated ingot dimension is 125 × 125 × 130 mm 3 .…”

Section: Furnace Diagrammentioning

confidence: 99%

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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“…The concave melt crystal interface pushes the impurities towards the center of the ingot, the convex melt-crystal interface pushes the impurities away from the center of the ingot and the flat melt-crystal interface maintains the horizontally uniform impurity concentration. [82][83][84] Figure 9 Shows the melt-crystal interface and the impurity distribution.…”

Section: Melt-crystal Interfacementioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis

Sekar,

Manikkam,

Perumalsamy

2023

Silicon

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Improvement of DS Grown Mc-Si Ingot for PV Application by Reducing the Thickness of the Bottom Heat Exchanger Block: Numerical Investigation

Cited by 6 publications

References 26 publications

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis

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