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The aim of this work is to improve the optical properties in the multi-crystalline silicon (mc-Si) by acid texturization. Generally, HF and HNO3 are using the mc-Si wafer acid texturization process and it is toxic chemical acids. In this work, H2O2 is used instead of HNO3 because of H2O2 less toxic chemical compared to HNO3. In this work, we have used the different types of chemical acids in different ratios for etching. Here, we have used HF: H2O2: CH3COOH=3:2:2, HF: H2O2: KMnO4 =3:2:0.2 M and HF: H2O2: HNO3: KMnO4 =3:2:2:0.2M for etching with the etching time of 60 sec. The HF: H2O2: KMnO4 =3:2:0.2M gives the better results as obtained from optical microscope, UV- Visible reflectance studies and X-ray diffraction (XRD) studies. The etched mc-Silicon wafer surface was analyzed by the optical microscope and Scanning Electron Microscope (SEM). The FTIR results indicate the reduction of oxidation in the etched samples. Moreover, the HF: H2O2: KMnO4 =3:2:0.2M textured wafers have the advantages of lower reflectance and increased etching of the mc-Silicon wafer.