Improvement of electrical characteristics in the solution‐processed nanocrystalline indium oxide thin‐film transistors depending on yttrium doping concentration

Ting, Chu-Chi; Fan, Hsin-Yun; Tsai, Min Kuang; Li, Weiyang; Yong, Hua-En; Lin, Yung-Hsiang

doi:10.1002/pssa.201330164

Cited by 15 publications

(5 citation statements)

References 42 publications

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“…The XPS spectra of In 3d peaks of In-Yb-O thin films with different Yb ratios were shown in Figure 5 b. The In peaks located at binding energies of 451.4 eV (In 3d 3/2 ) and 443.9 eV (In 3d 5/2 ) suggest the presence of In-O bonding [ 19 ]. With the Yb ratio increases, the In peak shifts toward a lower binding energy direction owing to stronger Yb-O binding strength (387 kJ/mol) than that of In-O (320 kJ/mol) [ 17 ].…”

Section: Resultsmentioning

confidence: 99%

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Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Hong

et al. 2022

Nanomaterials

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We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of In2O3 are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In. The optimized In-Yb-O thin-film transistors (TFTs) exhibit excellent electrical performance (mobility of 8 cm2/Vs and on/off ratio of ~108) and enhanced stability. The triumph of In-Yb-O TFTs is owing to the high quality In2O3 matrix, the remarkable suppressor of Yb, and the nanometer-thin and atomically smooth nature (RMS: ~0.26 nm) of channel layer. Therefore, the eco-friendly water-induced ultra-thin In-Yb-O channel provides an excellent opportunity for future large-scale and cost-effective electronic applications.

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Section: Resultsmentioning

confidence: 99%

“…The great difference in electronegativity between dopant and oxygen contributes to a strong metal-oxygen bond [ 18 ]. The SEP is considered as the main parameter to evaluate the ability of dopant to bind oxygen [ 19 ]. The metal-oxide dissociation energy is defined as the standard enthalpy change in reaction to the bond breaking.…”

Section: Introductionmentioning

confidence: 99%

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Hong

et al. 2022

Nanomaterials

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“…On the other hand, metal oxide TFTs are generally grown by vacuum-based technologies such as radio frequency (RF) magnetron sputtering, atomic layer deposition, or pulse laser deposition. Compared with the conventional approaches, solution processing has been actively studied owing to its low cost, large-area deposition capability, equipment simplicity, and ease in control of the composition ratio of each precursor. ,,− Solution processing initially focused on organic solvent, which is toxic to human beings and harmful to the environment. Fortunately, the recently developed aqueous solution processing is considered to be a safe and effective method for green oxide electronics …”

Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer

Liu

et al. 2019

ACS Appl. Electron. Mater.

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We report the aqueous-solution-processed Ni-doped In2O3 (Ni x In2–x O3, NiInO) thin-film transistors (TFTs) for the first time. The effect of Ni doping on In2O3 microstructure, oxygen defects, and the electron transport properties are investigated by extensive characterization techniques. Analyses indicate that the oxygen vacancies in NiInO are suppressed as the Ni-doping concentration increases, leading to a lower off-state current and a positive shift in threshold voltage. The optimized NiInO TFTs exhibit a high mobility of 17.71 cm2/(V s), on/off current ratio > 106, threshold voltage of 4.21 V, and superior bias stress stability. The success of Ni doping could be attributed to the small ion radius of Ni, large Lewis acid value, and strong Ni–O bond strength. Therefore, the fabricated NiInO TFT provides a bright path for the development of high-performance oxide TFTs.

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“…It can be observed that the local environment remains almost unchanged with increasing B doping concentrations. However, the In peak gradually shifts toward low binding energy, which is, on the one hand, due to due to the bonding strength of B-O (808 kJ/mol) being stronger than that of In-O (346 kJ/mol), and on the other hand because B doping can reduce oxygen vacancy-related defects, resulting in a denser atomic stacking and enhanced electron shielding between adjacent atoms [ 25 , 26 , 27 ]. Figure 3 c presents the XPS spectra of B 1s with different B contents.…”

Section: Resultsmentioning

confidence: 99%

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Peng

et al. 2022

Nanomaterials

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Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

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Improvement of electrical characteristics in the solution‐processed nanocrystalline indium oxide thin‐film transistors depending on yttrium doping concentration

Cited by 15 publications

References 42 publications

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

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