Improvement of electrical property for Pb(Zr0.53Ti0.47)O3ferroelectric thin film deposited by sol-gel method on SRO electrode

Hùng, Vũ Ngọc; Minh, Le Van; Huyền, Bùi Thị; Minh, Nguyễn Đức

doi:10.1088/1742-6596/187/1/012063

J. Phys.: Conf. Ser.

2009

DOI: 10.1088/1742-6596/187/1/012063

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Improvement of electrical property for Pb(Zr_0.53Ti_0.47)O₃ferroelectric thin film deposited by sol-gel method on SRO electrode

Vũ Ngọc Hùng

Le Van Minh

Bùi Thị Huyền

et al.

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Cited by 6 publications

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“…The devices showed 35% degradation in remnant polarization at frequency after 1 Â 10 6 cycles at room temperature, which is expected for Pt/PZT/Pt capacitor structures. 35 On the other hand, at an elevated temperature of 225 C, the devices showed fatigue resistance and degradation were insignificant even at 1 kHz. Both fatigue improvement and degradation have been reported with increased temperature.…”

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confidence: 99%

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Ghoneim

Hussain

2015

Applied Physics Letters

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mentioning

confidence: 99%

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Ghoneim

Hussain

2015

Applied Physics Letters

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Process dependence of the piezoelectric response of membrane actuators based on Pb(Zr0.45Ti0.55)O3 thin films

Nguyên

Nguyen

Dekkers³

et al. 2014

Thin Solid Films

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Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Nguyen

Houwman

Dekkers

et al. 2017

ACS Appl. Mater. Interfaces

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Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness.

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Improvement of electrical property for Pb(Zr_0.53Ti_0.47)O₃ferroelectric thin film deposited by sol-gel method on SRO electrode

Cited by 6 publications

References 6 publications

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Process dependence of the piezoelectric response of membrane actuators based on Pb(Zr0.45Ti0.55)O3 thin films

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

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