2007
DOI: 10.1117/12.712979
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Improvement of electro-optic effect and novel waveguide structure in hybrid polymer/sol-gel modulators

Abstract: A thermally stable crosslinkable electro-optic (EO) polymer is successfully contact-poled in a hybrid EO polymer/sol-gel waveguide modulator. The highest EO coefficient is demonstrated when the EO polymer is poled with a low resistivity sol-gel cladding layer. We achieve the highest in-device EO polymer r 33 coefficient of 170pm/V at 1.55µm, which has not been possible with previously reported polymer claddings. A sol-gel waveguide/cladding plays the main role in our hybrid approach not only for poling efficie… Show more

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Cited by 2 publications
(4 citation statements)
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“…It is possible to change the waveguide width lithographically, suggesting that these devices may well serve in an array to maximize the frequency coverage on a particular chip. Output power in the high microwatt level is predicted across the entire frequency range from 0.5 THz up to 15 THz.…”
Section: Proposed Devicementioning
confidence: 99%
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“…It is possible to change the waveguide width lithographically, suggesting that these devices may well serve in an array to maximize the frequency coverage on a particular chip. Output power in the high microwatt level is predicted across the entire frequency range from 0.5 THz up to 15 THz.…”
Section: Proposed Devicementioning
confidence: 99%
“…First, we wanted to make the THz mode more compact, since this maximizes the figure of merit, as can easily be seen from Eq. (15). Second, we wanted a waveguide that was relatively broadband.…”
Section: Proposed Devicementioning
confidence: 99%
See 1 more Smart Citation
“…In our previous reports, based on rib/rectangular waveguides and the poled polymer AJ309 [1,2] , different non-resonant electro-optic (EO) switches have been numerically proposed, and they usually exhibit a switching voltage of 2-5 V and an EO region length of 3-6 mm, which indicates a voltage-length product of 5-30 V·mm [3][4][5] . For a lower EO coefficient, a long active region is required to drop the switching voltage below 1 V, but this will lead to long waveguide length, which is not allowed in low-voltage, ultra-compact and chip-level interconnection.…”
mentioning
confidence: 99%