Improvement of electron diffusion lengths in polycrystalline silicon wafers by aluminium

Martinuzzi, S.; Poitevin, H.; Zehaf, M.; Zurletto, C.

doi:10.1051/rphysap:01987002207064500

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1999

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Cited by 15 publications

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“…In order to improve the performance of devices fabricated on polysilicon, aluminium is being used to neutralise the defects that are present at the grain boundaries (GBs) in this material [ 1,2]. It has been reported that aluminium diffusion at 450 "C for 2 h increases the minority carrier diffusion length in polysilicon [3]. Rodot et al [4] report that, added as a dopant, aluminium can act as a trap or as a passivating agent in polysilicon.…”

Section: Introductionmentioning

confidence: 99%