Improvement of Epitaxial GaN Films Grown on Patterned Sapphire Substrate by Growth Mode Control

Kim, Dae Sik; Lee, Chang Min; Jeong, Woo Seop; Cho, Seung Hee; Jhin, Junggeun; Byun, Dongjin

doi:10.1166/jnn.2016.13554

Cited by 5 publications

(1 citation statement)

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“…This phenomenon reveals that the PSS significantly improves the properties of the Bi 2 Se 3 crystal by inducing epitaxial lateral overgrowth (ELOG) of the thin film as reported in GaN/ PSS. 44 Generally, these types of PSSs have been utilized to decrease the large dislocations in heterogeneously grown materials on sapphire substrates. 45,46 During the lateral growth process, lots of dislocations bend to the patterns while very few dislocations bend in the lateral growth region because the dislocations tend to follow a path of minimum elastic energy per unit growth length of materials.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Cho

Lee

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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High-quality Bi2Se3 thin films with topological insulating properties at room temperature have recently attracted much attention as one of the promising materials for realizing innovative electronic and optoelectronic devices. Here, we report the high crystallinity growth of Bi2Se3 thin films on a patterned sapphire substrate (PSS) by using a vapor-phase transport deposition with minimizing thermal dissociation of Se atoms vaporized in Bi2Se3 powder. This PSS not only reduces the large dislocation of heterogeneously grown Bi2Se3 on a sapphire substrate but also induces enhanced light absorption in the visible to near-infrared (IR) ranges compared to Bi2Se3 on planar sapphire substrates. Thus, the Bi2Se3 thin film laterally grown on the PSS reveals uniform surface properties and high crystallinity in the rhombohedral lattice phase with a full width at half maximum of 0.06 ° for the XRD (003) peak. Also, the photoresponse of the fabricated IR conversion device using Bi2Se3/PSS heterostructure exhibits excellent performance and high reliability with no degradation after continuous switching. As a result, the device constructed with the Bi2Se3/PSS exhibits one order of magnitude higher NIR induced-photocurrent and 1–2 orders of magnitude faster photo-switching than that with Bi2Se3/Al2O3. Such an enhancement in the device performance of Bi2Se3/PSS is confirmed by the increased absorption spectra in visible and NIR ranges and the improved light absorption distribution.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Cho

Lee

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

Kim

Jeong

et al. 2017

Thin Solid Films

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Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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Improvement of Epitaxial GaN Films Grown on Patterned Sapphire Substrate by Growth Mode Control

Cited by 5 publications

References 0 publications

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

Emergence of high quality sputtered III-nitride semiconductors and devices

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Improvement of Epitaxial GaN Films Grown on Patterned Sapphire Substrate by Growth Mode Control

Cited by 5 publications

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Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

Emergence of high quality sputtered III-nitride semiconductors and devices

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Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates