Improvement of extra low impact energy SIMS data reduction algorithm for process control

Abstract

This work explores quantitative boron depth profiling in the top first nanometer using dynamic secondary ion mass spectrometry (SIMS). Dynamic SIMS measurements were performed with a magnetic sector CAMECA IMS Wf/SC Ultra, using extremely low impact energy O2+ (below 250 eV) sputtering. It was concluded that the modification of quantification protocol by the creation of a surface transient curve can provide a tool for the accurate characterization of low energy implantation wafers, including boron, under extremely low energy sputtering conditions with an oxygen beam.