Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

Abstract

The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.

Effect of in content on thermoelectric performance of In Ga1−N alloys: Hybrid density functional theory study based on realistic models

“…The Coulomb and exchange series summed in direct space were truncated using overlap criteria thresholds of [8,8,8,8,16]. Convergence for the self-consistent field algorithm was achieved up to a threshold of 10 −9 hartrees on the total energy per unit cell [29].…”

“…In x Ga 1−x N compounds are hard semiconductors with the ability to withstand high doses of radiation while also maintaining their optoelectronic properties [3,4,5]. Hence, by varying the In composition, the band gap can cover the entire electromagnetic spectrum from the visible to ultraviolet regions, making these ternaries suitable for use in various optoelectronic devices such as laser diodes and light-emitting diodes [6,7,8]. Moreover, these alloys exhibit strong optical absorption, 10 4 − 10 5 cm −1 , which changes according to the percentage of indium, and thus they are adequate chemical sensors with a high saturation rate [9,10,11].…”

Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition

“…Because of its wide direct band gap of 3.4 eV, significant chemical and thermal stability, and high electron velocities, gallium nitride (GaN) has attracted much attention as a promising semiconductor material for high-electron-mobility transistors (HEMTs), light-emitting diodes (LEDs), − high-power and high-frequency electronics, , and 5G communication . Substrates for the growth of GaN are mainly sapphire, SiC, and Si. − Among these substrates, Si is considered as the most attractive substrate for GaN growth because of its large wafer size and compatibility with the existing microelectronic technique .…”

Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

“…[2][3][4][5] The (0002) omega-2theta scan is the common method to calculate the period and composition of superlattices or multiple quantum well (MQW) structures. 6,7) X-ray reflectivity (XRR) is useful to simulate the thickness and interface roughness of thin layers. [8][9][10] The authors of 11 proposed a formula to calculate the periodicity fluctuation of superlattices, which was widely adopted by some other researchers.…”

“…( 4) and ( 5), that with thinner The FWHM of the satellite peak as a function of the satellite peak order using the linear fits of Eqs. ( 6) and (7) for the five samples. (a), (c), (e), (g) and (i) represent the FWHM versus satellite peak order fitted by Eq.…”