Improvement of high resolution lithography by using amorphous carbon hard mask

Pauliac-Vaujour, S.; Brianceau, P.; Comboroure, C.; Faynot, O.

doi:10.1016/j.mee.2008.02.007

Cited by 27 publications

(13 citation statements)

References 14 publications

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“…In order to surmount this problem, we have added a very thin (few nanometers) capping layer onto the amorphous carbon hard mask that enables to overcome photoresist thickness limitations. 22 Indeed, in our process screen, the photoresist features are only used to pattern the thin silicon oxide capping layer.…”

Section: Photoresist Pattern Aspect Ratio Limitationsmentioning

confidence: 99%

“…For example, multiple patterning, 13 spacer patterning, 14,15 and cutting 16 have made it possible to reduce the pitch between patterns, whereas photoresist trimming, 17,18 hard mask trimming, 19 and capping layer 20 aim at reducing critical dimensions (CDs). In this work, we have considered using an amorphous carbon hard mask 21 capped by a thin silicon oxide layer 20,22 in order to maximize CD reduction by suppressing photoresist thickness limitations. This study is based on previous results using capped amorphous carbon stacks.…”

Section: Introductionmentioning

confidence: 99%

“…This study is based on previous results using capped amorphous carbon stacks. 22,23 We aim at determining extreme working points of this technique and hence evaluating its potential when fully exploited for overcoming current lithography challenges. Furthermore, concentrating all etching steps in the same tool and chamber was a necessary condition to demonstrate industrial compatibility and to have a process equivalent to standards.…”

Section: Introductionmentioning

confidence: 99%

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Capped carbon hard mask and trimming process: A low-cost and efficient route to nanoscale devices

Pauliac-Vaujour

Brianceau

Comboroure

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Both sub-22 nm architecture design optimization and reliable, low-cost process development represent major challenges toward nanoscale device fabrication. In order to address the second of these two issues, the authors have demonstrated that it is possible to overcome current tool and process lithography limitations using a capped carbon hard mask process, without dramatically increasing device fabrication costs, as only existing tools are used in this process. Starting from 50 nm patterns, 25 nm fully depleted silicon-on-insulator (FDSOI) transistors with good reliability and acceptable electrical behavior are obtained. This patterning solution may be applied to existing lithography processes (dry or immersion ArF lithography) in order to enhance current resolution capabilities. Moreover, the use of a capping layer enables to set free from photoresist thickness limitations, which are becoming increasingly critical for sub-22 nm feature patterning. Indeed, for such dimensions, photoresist thickness generally needs to be lower than 66 nm in order to avoid pattern collapse effects. This trend can lead to serious integration problems especially for the fabrication of thick stack device architectures. Therefore, in addition to improving current lithography processes, our strategy may also be useful for novel lithography processes such as extreme ultraviolet lithography or maskless lithography. The authors have also demonstrated that the capped carbon hard mask process could enable the patterning of sub-11 nm FDSOI gates, with a current best result close to 7 nm, starting from 30 nm photoresist patterns. Note that all etching steps of the process have been performed in the same etching chamber, which is a key point for meeting industrial requirements. These results show that it is possible to bypass tool and process lithography limitations to pattern sub-22 nm devices without dramatically increasing fabrication costs while maintaining lithography throughput. The authors have therefore shown that the capped carbon hard mask process could be a high-performance and low-cost industry-compatible solution for nanoscale device fabrication.

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Section: Photoresist Pattern Aspect Ratio Limitationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Capped carbon hard mask and trimming process: A low-cost and efficient route to nanoscale devices

Pauliac-Vaujour

Brianceau

Comboroure

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Therefore, strategies based on two-or three-organic layer system, with inorganic hard-mask interlayer or lift-off for the deposition of the hard-mask after patterning of the organic resist, had been explored; besides the beneficial introduction of the inorganic hard-mask, all these strategies come with the downside of an increased process complexity [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

Grenci

Zanchetta

Pozzato

et al. 2015

Applied Materials Today

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“…A commonly used stack is a thick amorphous carbon layer deposited by chemical vapor deposition topped by a thin silicon-rich layer. 5,6 A thin photoresist film is then sufficient to pattern the thin silicon layer, avoiding the pattern collapse problem in thicker resist films. The silicon is then used as a hardmask to pattern the thick carbon layer, giving a high-aspect-ratio carbon pattern suitable for subsequent etching of the silicon wafer.…”

Section: Introductionmentioning

confidence: 99%

Spin-on carbon based on fullerene derivatives as hardmask materials for high-aspect-ratio etching

Frommhold

Palmer

Robinson

2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The advance of lithographic resolution has made it necessary to adopt extremely thin photoresist films for the fabrication of "2× nm" structures in order to mitigate problems such as resist collapse during development but limiting achievable etch depths at the same time. By using multilayer hardmask stacks, a considerable increase in achievable aspect ratio is possible. We have previously presented a fullerene-based spin-on carbon hardmask material capable of high-aspect-ratio etching. We report our latest findings in material characterization of an original and a modified formulation. By using a higher adduct derivative fullerene, the solubility in industry-friendly solvents and thermal stability could be improved. The etching performance and materials characteristics of the new higheradduct fullerene hardmask were found to be comparable to those of the original hardmask.

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Improvement of high resolution lithography by using amorphous carbon hard mask

Cited by 27 publications

References 14 publications

Capped carbon hard mask and trimming process: A low-cost and efficient route to nanoscale devices

Capped carbon hard mask and trimming process: A low-cost and efficient route to nanoscale devices

High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

Spin-on carbon based on fullerene derivatives as hardmask materials for high-aspect-ratio etching

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