Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO<sub>2</sub> deposition and CO<sub>2</sub> annealing

Fujimoto, Hiroki; Kobayashi, Takuma; Shimura, Takayoshi; Watanabe, Heiji

doi:10.35848/1882-0786/ace7ac

Cited by 5 publications

(1 citation statement)

References 35 publications

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“…Also, CO 2 annealing at high temperatures was proved to improve the SiO 2 /SiC interface properties and the immunity against bias temperature stress. 20,21) Most of the above methods are used after the formation of thermally-grown SiO 2 . The introduction of nitrogen and phosphorous atoms results in reduced V th , and even normally-on devices, which cause device safety and reliability concerns, are presented.…”

Section: Introductionmentioning

confidence: 99%

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma

Li,

Hoshii,

Tsutsui

et al. 2024

Jpn. J. Appl. Phys.

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SiC MOS devices with SiO2 gate dielectrics deposited by atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the infrared absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV/cm were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V-1s-1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.

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Section: Introductionmentioning

confidence: 99%

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma

Li,

Hoshii,

Tsutsui

et al. 2024

Jpn. J. Appl. Phys.

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Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Kil,

Kobayashi,

Shimura

et al. 2023

AIP Advances

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Oxidation of silicon carbide (SiC) is known to induce defects at the interface of the SiO2/SiC system. NO-annealing is a standard industrial method of nitridation, but oxidation may progress during NO-nitridation, which may generate interface defects. Here, we propose a new method of fabricating SiO2/SiC metal-oxide-semiconductor (MOS) devices: sputter deposition of SiO2 in an Ar/N2 gas mixture followed by high-temperature CO2-post deposition annealing to form SiO2 and incorporate nitrogen at the interface while suppressing oxidation of the SiC. We obtained the nitrogen depth profile by performing x-ray photoelectron spectroscopy and confirmed that most of the nitrogen atoms exist at the abrupt interface. While maintaining a low interface state density and good insulating property, we demonstrated much improved reliability of MOS devices compared to conventional NO-annealed samples, thanks to the well-designed SiO2/SiC interface by the proposed method.

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A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Shangguan,

Lv,

Jiang

2024

Nanomaterials

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Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preliminary success, and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar to the history of Si, the immature material grown and device manufacturing processes at the current stage seriously hinder the popularization of wide bandgap semiconductor-based applications, and one of the crucial issues behind this is the defect problem. Here, we take amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss physical/mechanical properties, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on defect formation, evolution, and annihilation are summarized, and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance.

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Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO₂ deposition and CO₂ annealing

Cited by 5 publications

References 35 publications

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

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Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing

Cited by 5 publications

References 35 publications

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

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Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO₂ deposition and CO₂ annealing

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma