Improvement of limit of detection sensitivities in the parts per billion range using conventional geometry synchrotron radiation excited EDXRF measurements

Alam, Md. Akhlak; Tiwari, M. K.; Trivedi, Ayushi; Khooha, Ajay; Singh, Ajit Kumar

doi:10.1039/d2ja00016d

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…Although TXRF spectrometry is usually considered to be the best XRF method for obtaining excellent low LODs , other geometries such as conventional XRF spectrometry and μXRF spectrometry can be optimised to have an ultra-low background and therefore very low LODs. Alam et al 45 demonstrated that the absolute LODs of a few μg obtained when using a conventional EDXRF geometry could be improved to the levels obtained using TXRF spectrometry by preparing minute amounts (90 ng of a multielement RM) of sample on thin kapton foils (12–100 μm). Both techniques were applied at a synchrotron facility (BL-16 beamline of Indus-2) to make use of the polarisation of the synchrotron light and a geometry with an azimuth angle of 0° and a scattering angle 90°.…”

Section: Grazing X-ray Techniques Including Txrf Spectrometrymentioning

confidence: 99%

Atomic spectrometry update: review of advances in X-ray fluorescence spectrometry and its special applications

Vanhoof

Bacon

Fittschen

et al. 2022

J. Anal. At. Spectrom.

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Section: Grazing X-ray Techniques Including Txrf Spectrometrymentioning

confidence: 99%

Atomic spectrometry update: review of advances in X-ray fluorescence spectrometry and its special applications

Vanhoof

Bacon

Fittschen

et al. 2022

J. Anal. At. Spectrom.

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X-ray characterization of just one atom: A pioneering accomplishment

Zaman

2023

Matter

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Correlation of interfacial and dielectric characteristics in atomic layer deposited Al2O3/TiO2 nanolaminates grown with different precursor purge times

Padhi,

Ajimsha,

Rai

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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Considering the potential applications of Al2O3/TiO2 nanolaminates (ATA NLs) in storage capacitors, device-grade ATA NLs are fabricated using an ALD system, wherein the effect of precursor purging time on interfacial, and dielectric properties is thoroughly investigated. With an increase in half-cycle purging time from 2 to 4 s, the observed improvement in interface quality and sublayer density of these NLs is ascribed to the efficient removal of reaction by-products and impurities. Moreover, with an increase in purge time from 2 to 4 s, the increase in dielectric constant and concurrent decrease in dielectric loss from ∼132 to 154 and from ∼0.29 to 0.2, respectively, are primarily assigned to the improvement in sublayer conductivity contrast assisted Maxwell–Wagner interfacial polarization across Al2O3/TiO2 interfaces. The NL based devices fabricated at 4 s purging time, exhibited a capacitance density of ∼18.94 fF/μm2, low equivalent oxide thickness of ∼1.82 nm, and reduced leakage current density of ∼3.04 × 10−5 A/cm2 at 2 V applied bias, which demonstrates its suitability as high-k materials for energy storage applications. Furthermore, this study not only gives an insight of the purging time induced growth chemistry of ATA NLs but also explores the possibility of improving its dielectric performance essential for multifaceted applications.

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Improvement of limit of detection sensitivities in the parts per billion range using conventional geometry synchrotron radiation excited EDXRF measurements

Abstract: Energy dispersive X-ray fluorescence (EDXRF) is a widely used non-destructive technique for micro and trace multi-element analysis of materials. Conventional trials show that using laboratory assisted EDXRF measurements, one can...

Cited by 3 publications

References 29 publications

Atomic spectrometry update: review of advances in X-ray fluorescence spectrometry and its special applications

Atomic spectrometry update: review of advances in X-ray fluorescence spectrometry and its special applications

X-ray characterization of just one atom: A pioneering accomplishment

Correlation of interfacial and dielectric characteristics in atomic layer deposited Al2O3/TiO2 nanolaminates grown with different precursor purge times

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