We hereby report detailed structural and morphological studies for an ultrathin NiO/ZnO bilayer structure grown on sapphire (001) substrate using pulsed laser deposition technique. The combined X‐ray reflectivity (XRR) and grazing incidence X‐ray fluorescence (GIXRF) studies revealed formation of a low‐density defective ZnO interfacial layer of thickness ~32 Å at the ZnO/sapphire interface prior to growth of main ZnO layer. Our results further indicate that the variation of electron density across the NiO/ZnO bilayer structure is smooth and we do not observe presence of any interface layer between them. X‐ray diffraction measurements show that deposited ZnO layer is epitaxial in nature whereas NiO is highly oriented along (100) direction. The angle dependent X‐ray absorption near edge fine structure (XANES) measurements at Ni–K edge has been utilized to determine depth‐resolved oxidation state of Ni and the results have been correlated with the depth‐resolved electron density of NiO layer. The method described here offers nondestructive determination of the microstructural parameters as well as depth‐resolved mapping of oxidation state of a thin film‐based heterojunction device. It extends several advantages over destructive methods which are abundantly reported in literature.

Energy dispersive X-ray fluorescence (EDXRF) is a widely used non-destructive technique for micro and trace multi-element analysis of materials. Conventional trials show that using laboratory assisted EDXRF measurements, one can...

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The L1, L2 and L3 subshells of Hf, Ta and Re atoms have been excited selectively by using microprobe XRF beam line, Indus‐2, RRCAT, India. The consequent characteristic L X‐ray photons, emitted from the targets due to creations of vacancies in L subshells, are measured using silicon drift detector (X‐123) spectrometer. As the energy of synchrotron radiation increases, the contribution of characteristic L X‐ray intensity increases. The advantage of the increase in the intensity of the characteristic L X‐ray photons with an increase in the energy of synchrotron radiation has been used to determine the L subshell fluorescence yield ratios of Hf, Ta and Re atoms by adopting the selective excitation method. The measured ratios of L subshell fluorescence yield have been compared with theoretical and other experimental values.