1995
DOI: 10.1063/1.358563
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Improvement of minority carrier diffusion length in Si by Al gettering

Abstract: Gettering is already an integral part of fabricating integrated circuits using Si substrates. It is anticipated that this will also be true for solar cell fabrication in the near future. A readily available technique compatible with solar cell processing is gettering by the Si wafer back surface Al. Recently, available solar cell efficiency studies have shown the beneficial effects of the wafer backside Al, including that of gettering, a wafer backside field, and grain boundary and dislocation passivation. In … Show more

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Cited by 41 publications
(24 citation statements)
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“…Both effects contribute to increase the effective bulk lifetime in the base region. So far, the aluminum gettering process is explained as follows: The molten AlSi alloy acts as an infinite sink for impurities diffusing out of the silicon and fast diffusers, mainly copper and iron [11,12], are readily gettered. Since the solubility of metals in Si does not exceed 1017 cm-3 , the segregation coefficient of the metal between the liquid and Si is of the order of 104, which provides a tremendously large driving force for the metal to segregate into the liquid [12].…”
Section: Resultsmentioning
confidence: 99%
“…Both effects contribute to increase the effective bulk lifetime in the base region. So far, the aluminum gettering process is explained as follows: The molten AlSi alloy acts as an infinite sink for impurities diffusing out of the silicon and fast diffusers, mainly copper and iron [11,12], are readily gettered. Since the solubility of metals in Si does not exceed 1017 cm-3 , the segregation coefficient of the metal between the liquid and Si is of the order of 104, which provides a tremendously large driving force for the metal to segregate into the liquid [12].…”
Section: Resultsmentioning
confidence: 99%
“…Thus, it may be important to include impurity gettering and hydrogen passivation in TF-Si solar cell fabrication [88][89][90][91][92].…”
Section: Processing Considerations For Tf-si Solar Cell Fabricationmentioning
confidence: 99%
“…Several groups have investigated the beneficial effects of this process and some of the best cell results using the process are reported in [2-51. The aluminum-alloy back-surface-field process can improve cell efficiency both through gettering of fast-diffusing impurities [6] and reflection of carriers from the back contact. The latter mechanism is important only if the minority carrier difision length (L) is comparable to, or larger than the cell thickness (W).…”
Section: O the Challengementioning
confidence: 99%