Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid–solid” (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers.

The aim of this review was to describe the current evidence-based knowledge of the epidemiology, prevalence, incidence, risk factors and genetic associations of drug allergy. Articles published between 1966 and 2010 were identified in MEDLINE using the key words adult, adverse drug reaction reporting systems, age factors, anaphylactoid, anaphylaxis, anaesthetics, antibiotics, child, drug allergy, drug eruptions, ethnic groups, hypersensitivity, neuromuscular depolarizing agents, neuromuscular nondepolarizing agents, sex factors, StevensJohnson syndrome and toxic epidermal necrolysis. Additional studies were identified from article reference lists. Relevant, peer-reviewed original research articles, case series and reviews were considered for review. Current epidemiological studies on adverse drug reactions (ADRs) have used different definitions for ADR-related terminology, often do not differentiate immunologically and non-immunologically mediated drug hypersensitivity, study different study populations (different ethnicities, inpatients or outpatients, adults or children), utilize different methodologies (spontaneous vs. non-spontaneous reporting, cohort vs. case-control studies), different methods of assessing drug imputability and different methods of data analyses. Potentially life-threatening severe cutaneous adverse reactions (SCAR) are associated with a high risk of morbidity and mortality. HLA associations for SCAR associated with allopurinol, carbamazepine and abacavir have been reported with the potential for clinical use in screening prior to prescription. Identification of risk factors for drug allergy and appropriate genetic screening of at-risk ethnic groups may improve the outcomes of drug-specific SCAR. Research and collaboration are necessary for the generation of clinically-relevant, translational pharmacoepidemiological and pharmacogenomic knowledge, and success of health outcomes research and policies on drug allergies.

The bonding speed (or contact wave velocity) of silicon and fused quartz wafers has been measured as a function of temperature. The results show that the bonding process stops to operate at temperatures above 90°C and 320°C for fused quartz and bare silicon wafers, respectively. By comparing our results to infrared spectra obtained from silica gel we develop a tentative model of the bonding process. This model is based on the assumption that the initial wafer bonding process occurs via hydrogen bonds of adsorbed water. This model explains why the bonding strength increases in two distinct steps during high temperature annealing. By introducing a phenomenological time constant τ we can also account for the fact that in an intermediate temperature range the bonding strength does not depend on annealing time as it has been reported in the literature.

The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.PACS 64.75.Jk; 61.46.Km

Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski-grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.