Improvement of Ozone Generation Characteristics with Shorter Rise Time of Nanosecond Pulse Voltage

Fukuoka, Hideaki; Iida, Shuhei; Wang, Douyan; Namihira, T.

doi:10.1109/ppps34859.2019.9009782

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…The research shows that rise/ fall time of high-voltage pulses has a great influence on experimental results, such as the surface potential of material treatment [6], mean electron energy of plasma in parallel-plate capacitive coupled plasma source [7], and ionisation rate distribution in atmospheric pressure plasma jets [8]. In Dielectric Barrier Discharges (DBDs) and ozone generation experiments [9], the effects of pulse excitation with different pulse edges are other. Rise/fall time also influences particle moving trajectory in magnetrons [10].…”

Section: Introductionmentioning

confidence: 99%

A high‐voltage solid‐state Marx generator with adjustable pulse edges

et al. 2023

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Most reactors for non‐thermal plasma excitation are capacitive to pulse generators. The density and temperature of electrons in plasma are dominated by the discharging currents which are proportional to the pulse edges. However, adjusting the pulse edges is quite challenging since the switching speed and the inductance and capacitance in the discharging loops dominate them. This study proposes a drive circuit for solid‐state Marx generators with adjustable edges. The drive circuit controls the Miller plateau by adjusting the gate voltage amplitude to adjust both the rise time and fall time of pulses continuously and independently. The influence of the gate voltage on the Miller plateau and the rise time is studied. The feasibility is verified by both simulating and experimental results. An 8‐stage solid‐state Marx generator prototype was built, and 4.8‐kV pulses with a rise time in the range of 79 ns‐22.21 μs were obtained over capacitive loads. Adjusting pulse edges can control the current amplitudes in dielectric barrier discharge loads.

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Section: Introductionmentioning

confidence: 99%

A high‐voltage solid‐state Marx generator with adjustable pulse edges

et al. 2023

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“…It is challenging to directly generate high-amplitude pulse voltages with a semiconductor-based circuit. Considering the operating voltage and current requirements of switches in HEMP simulators, gas spark gaps are adopted in some nanosecond pulse generators [5,6,8,[17][18][19][20][21]. The FEMP-2000 [5] and HEREMP [6] from Centre d'Etudes de Gramat, France, use three spark gaps in series and control the switch operating voltage by adjusting the SF 6 gas pressure.…”

Section: Introductionmentioning

confidence: 99%

A Compact High-Stability Nanosecond Pulse Test System Using Corona-Stabilized Switch and Coaxial Resistance Divider

et al. 2023

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Due to the lack of a standard nanosecond high-voltage pulse generator for sensor calibration, a high-stability nanosecond high-voltage pulse test system was developed in terms of circuit analysis, structural design, and performance test. By establishing the equivalent circuit model of the nanosecond pulse generator, the circuit component parameters of the five-stage Marx loop and the one-stage compression steepening unit were simulated. The influence of the action performance of the steepening gap on the characteristics of output nanosecond pulse was analyzed. The nanosecond pulse test system was established through the structural design of the nanosecond pulse-generating circuit, the development of a high-performance corona-stabilized switch, and the measurement of a fast-response resistance divider made of metal oxide thin-film resistors. The nanosecond pulse test system has the capability to output a double exponential nanosecond pulse voltages in the amplitude range of 10–60 kV with a rise time of 2.3 ± 0.5 ns and a half-peak time of 23 ± 5 ns. In addition, the output pulse voltage has a high consistency and stability in the full amplitude range. The maximum relative standard deviation of the peak value is 1.517%, and the relative standard uncertainty is less than 5‰.

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