Improvement of pattern collapse issue by additive-added D.I. water rinse process

Tánaka, Keiichi; Naito, Ryoichiro; Kitada, Tomohiro; Kiba, Yukio; Yamada, Yoshiaki; Kobayashi, Masakazu; Ichikawa, Hiroyuki

doi:10.1117/12.485069

Cited by 20 publications

(9 citation statements)

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“…The success of such approach relied on the identification of surface-active materials that provided a significant decrease in surface tension γ while affording moderate resist surface wetting. Although an increase in the Critical Aspect Ratio of Collapse (CARC) of 20-30% has been demonstrated by the use of surfactanated rinses [2,17] and commercial rinses have been developed following this methodology [18,19], results reported on the optimization of surfactant-containing rinses indicate that the identification of a rinse featuring a (γ cos θ) product lower than DI H 2 O does not necessarily warrant an improved pattern collapse performance [2,20,21].…”

Section: Surfactant-containing Rinse and Resist Design For Collapse Mmentioning

confidence: 94%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO 2 ) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

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Section: Surfactant-containing Rinse and Resist Design For Collapse Mmentioning

confidence: 94%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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“…The same kind of trimming can be achieved by wet etching, but as this type of etching controls etch amount by processing time, it is inferior to the proposed self-limiting chemical dry etch process in terms of controlling inter-wafer variation. In addition, TEOS, while being more rigid than organic materials, becomes less resistant to the surface tension of wet-etching chemicals [4,5] as aspect ratio increases causing bending to occur. In contrast, the chemical dry etch process of Fig.…”

Section: Novel Mask Trimming Schemes and Performances By Non-plasma Cmentioning

confidence: 98%

Precise CD control techniques for double patterning and sidewall transfer

Nishimura

Kushibiki

Yatsuda

2008

Optical Microlithography XXI

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We have successfully developed a self-limiting chemical dry etch process, associated equipment, and process flow featuring no use of plasma and no mask bending. In this process and process flow, the system performs mask trimming for critical dimension (CD) adjustments after hard-mask formation. First, the CD as defined in lithography is directly transferred by reactive ion etching (RIE) to silicon oxide film that is to become the hard mask. Next, reactive gas is deposited on the surface of the silicon oxide film at low temperatures and the reaction product is evaporated at high temperatures. With this process flow, there is no need to trim a mask made of organic materials. As a result, there is no mask bending and the amount of hard-mask trimming can be set by the amount of gas flow and pressure in the chemical dry etch process enabling detailed CD control to be performed. The proposed technology means that even higher aspect ratios in masks and finer CD control can be achieved for processes such as double patterning (DP) and sidewall transfer (SWT).

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“…It has been reported that surfactant rinse processes typified by FIRM are effective in controlling the stress applied to resist patterns [3,4]. We therefore decided to quantify the extent to which pattern collapse can be controlled by the FIRM process.…”

Section: Pattern-collapse Reduction Effect By Use Of a Surfactantmentioning

confidence: 99%

Adapting immersion exposure to mass production by adopting a cluster of novel resist-coating/developing and immersion-exposure equipment

et al. 2007

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The demand for even denser semiconductor devices is driving efforts to reduce pattern dimensions in semiconductor lithography. It has been found that 193-nm immersion lithography technology can achieve smaller patterns without having to modify the infrastructure technology of existing state-of-the-art 193-nm dry lithography. This has made 193-nm immersion lithography a promising technology for next-generation mass production processes. It is now under full-scale development and is about to enter a commercial stage applicable to mass production.In 193-nm immersion lithography, the space between the optical projection system and silicon wafer is filled with liquid thereby immersing the resist film in de-ionized water during exposure. This generates a number of concerns, such as the penetration of moisture into the resist, the leaching of resist components into deionized water, and the presence of residual moisture, all of which can lead to defects that can affect post-processing. It has been reported; however, that rinse processing before and after exposure can be effective in reducing such defects [1]. Also, the trend toward finer patterns has resulted in large aspect ratios that can lead to pattern collapse, but the application of a surfactant has been found to ease this problem. Controlling the drying process after rinsing has also been found to reduce residue adhering to the resist.The stability of process data is considered to be a crucial factor in the adapting of 193-nm immersion lithography to mass production. In this report, we obtain long-term data on defects and critical dimension (CD), examine this data for process stability, and discuss the applicability of 193-nm immersion lithography to mass production.

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Improvement of pattern collapse issue by additive-added D.I. water rinse process

Cited by 20 publications

References 0 publications

Pattern collapse mitigation strategies for EUV lithography

Pattern collapse mitigation strategies for EUV lithography

Precise CD control techniques for double patterning and sidewall transfer

Adapting immersion exposure to mass production by adopting a cluster of novel resist-coating/developing and immersion-exposure equipment

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