Precise CD control techniques for double patterning and sidewall transfer

Abstract

We have successfully developed a self-limiting chemical dry etch process, associated equipment, and process flow featuring no use of plasma and no mask bending. In this process and process flow, the system performs mask trimming for critical dimension (CD) adjustments after hard-mask formation. First, the CD as defined in lithography is directly transferred by reactive ion etching (RIE) to silicon oxide film that is to become the hard mask. Next, reactive gas is deposited on the surface of the silicon oxide film at low temperatures and the reaction product is evaporated at high temperatures. With this process flow, there is no need to trim a mask made of organic materials. As a result, there is no mask bending and the amount of hard-mask trimming can be set by the amount of gas flow and pressure in the chemical dry etch process enabling detailed CD control to be performed. The proposed technology means that even higher aspect ratios in masks and finer CD control can be achieved for processes such as double patterning (DP) and sidewall transfer (SWT).

A Cost Effective Spin on Sidewall Material Alternative to the CVD Sidewall Process

“…It is a significant difference or not, we could not make sure now. 1.20 g/cm 3 1.18 g/cm 3 1.19 g/cm 3 1.19 g/cm 3 PR 1.22 g/cm 3 1.21 g/cm 3 1.20 g/cm 3 1.18 g/cm 3 1.19 g/cm 3 1.19 g/cm 3 Si substrate ( 2.33 g/cm About interface roughness between photo resist-A and Si-material 5, there were only 4 A roughness. This was very similar result of 3.1.…”

Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique

“…For the production of these three dimensional devices, it is indispensable to verify vertical Si pillar fabrication techniques. 19) In this paper, we propose a new fabrication technology for slim Si pillars with multiple double patterning technique. Moreover, we have confirmed that by using the proposed multiple double patterning technique, the formation of Si pillars of 23.6 nm with a half pitch of 25 nm can be realized on a 300 mm wafer, using conventional line and space photolithography with 100 nm pitch (i.e., 50 nm in half pitch).…”