Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF<sub>4</sub> Plasma Treatment

Wang, Chen; Peng, Cong; Wen, Pan; Xu, Meng; Chen, Longlong; Zhang, Jianhua

doi:10.1109/ted.2023.3244903

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…CF 4 was, for example, used on top of the IGZO channel region, with a mild power of 15 W, to ensure no damage to the layer [51]. CF 4 has also been recently used for IGZO TFTs and demonstrated improvements in all kinds of gate bias stresses and illumination stresses [52]. Regarding our experiment, we describe the impact not only on the gate insulator but also on the DOS of the channel material.…”

Section: Discussionmentioning

confidence: 99%

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Avis,

Jang

2023

Materials

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We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO2 insulator demonstrated a slightly higher breakdown voltage, whereas the capacitance value remained almost constant (~150 nF/cm2). The linear mobility slightly increased from ~30 to ~35 cm2/Vs when the treatment time increased from 0 to 10 s, whereas a 30 s-treated TFT demonstrated a decreased mobility of ~15 cm2/Vs. The subthreshold swing and the threshold voltage remained in the 100–120 mV/dec. range and near 0 V, respectively. The hysteresis dramatically decreased from ~0.5 V to 0 V when a 10 s treatment was applied, and the 10 s-treated TFT demonstrated the best stability under high current stress (HCS) of 100 μA. The analysis of the tin oxide thin film crystallinity and oxygen environment demonstrated that the a-SnOx remained amorphous, whereas more metal–oxygen bonds were formed with a 10 s NF3 plasma treatment. We also demonstrate that the density of states (DOS) significantly decreased in the 10 s-treated TFT compared to the other conditions. The stability under HCS was attributed to the HfO2/a-SnOx interface quality.

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Section: Discussionmentioning

confidence: 99%

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Avis,

Jang

2023

Materials

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“…2.97 (5) When comparing the average crystallite size values, it becomes evident that the dopant insertion increased the average crystallite size. In the case of pure ZnO, D = 110 nm, whereas for Er-doped ZnO, D = 115 nm.…”

Section: Parameters Equation Znomentioning

confidence: 97%

“…Zinc oxide (ZnO) is an n-type of semiconductor that has been extensively studied due to its unique properties such as thermal and optical stability, adequate band gap, large excitation binding energy, and affordable cost. These properties make it appropriate for use in various applications such as solar cells, energy storage, optoelectronics and electronic devices [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ], and photocatalysis [ 8 , 9 , 10 , 11 ]. Additionally, ZnO nanoparticles are non-toxic and biocompatible, making them suitable for various biological applications [ 12 , 13 , 14 ], which is why they are receiving attention in different research fields.…”

Section: Introductionmentioning

confidence: 99%

Green Synthesis of Er-Doped ZnO Nanoparticles: An Investigation on the Methylene Blue, Eosin, and Ibuprofen Removal by Photodegradation

Silva,

Castro-Lopes,

Jerônimo

et al. 2024

Molecules

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We present a study on the green synthesis of undoped and Er-doped ZnO compounds using Mangifera indica gum (MI). A set of tests were conducted to assess the structure of the material. The tests included X-ray diffraction, Raman, and Fourier-transform infrared spectroscopy. Optical properties were studied using diffuse reflectance and photoluminescence. Morphological and textural investigations were done using SEM images and N2 adsorption/desorption. Furthermore, photocatalytic tests were performed with methylene blue (MB), yellow eosin (EY), and the pharmaceutical drug ibuprofen (IBU) under UV irradiation. The study demonstrated that replacing the stabilizing agent with Mangifera indica gum is an effective method for obtaining ZnO nanoparticles. Additionally, the energy gap of the nanoparticles exhibits a slight reduction in value. Photoluminescence studies showed the presence of zinc vacancies and other defects in both samples. In the photocatalytic test, the sample containing Er3+ exhibited a degradation of 99.7% for methylene blue, 81.2% for yellow eosin, and 52.3% for ibuprofen over 120 min. In the presence of methyl alcohol, the degradation of MB and EY dyes is 16.7% and 55.7%, respectively. This suggests that hydroxyl radicals are responsible for the direct degradation of both dyes. In addition, after the second reuse, the degradation rate for MB was 94.08%, and for EY, it was 82.35%. For the third reuse, the degradation rate for MB was 97.15%, and for EY, it was 17%. These results indicate the significant potential of the new semiconductor in environmental remediation applications from an ecological synthesis.

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Tunable etch resistance of channel of back‑channel‑etch IGZO-ITO thin‑film transistors

Peng,

Wang,

Chen

et al. 2025

Applied Surface Science

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Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF₄ Plasma Treatment

Cited by 8 publications

References 31 publications

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Green Synthesis of Er-Doped ZnO Nanoparticles: An Investigation on the Methylene Blue, Eosin, and Ibuprofen Removal by Photodegradation

Tunable etch resistance of channel of back‑channel‑etch IGZO-ITO thin‑film transistors

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Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Cited by 8 publications

References 31 publications

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors

Green Synthesis of Er-Doped ZnO Nanoparticles: An Investigation on the Methylene Blue, Eosin, and Ibuprofen Removal by Photodegradation

Tunable etch resistance of channel of back‑channel‑etch IGZO-ITO thin‑film transistors

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Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF₄ Plasma Treatment