Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al<sub>2</sub>O<sub>3</sub> Capping Layer

Liang, Lingyan; Liu, Zhi Min; Cao, Hu; Shi, Yuxuan; Sun, Xuming; Zheng, Yingkui; Chen, Ai Hua; Zhang, Hai Zhong; Fang, Yan

doi:10.1021/am100236s

Cited by 39 publications

(23 citation statements)

References 20 publications

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“…The annealed thin film and device exhibited high Hall (4.8 cm 2 V −1 s −1 ) and field‐effect (1 cm 2 V −1 s −1 ) mobilities, suggesting that there is room to improve in the performance of SnO‐based devices . This was followed by Guo et al and Liang and co‐workers, who performed very detailed structural, optical, and electrical studies on SnO thin films grown by e‐beam evaporation (EBE).…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…After this, more efforts have been exerted to measure the indirect E g values from thin‐film samples. Liang et al measured a small indirect E g of 0.5 eV by optical absorption from a polycrystalline SnO thin film capped by Al 2 O 3 . Toyama and co‐workers successfully demonstrated the measurement of the indirect E g of SnO from the photoacoustic spectrum and photothermal deflection spectroscopy, with results of 0.7 and 0.6 eV, respectively .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

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Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…Isotropic, extended s orbitals Manuscript constitute the overlapped wave functions of the cations, which form a conduction path of hole and potentially cause high hole mobilities [2]. However, the SnO TFTs reported thus far have been fabricated without a passivation layer [3]- [5] even though the passivation layer is critical for the mechanical and chemical protection of the TFTs and can improve the phase stability of the SnO thin film [6]. From the previous works for a-IGZO TFTs, it has been known that the interaction of the semiconductor surface with atmospheric humidity and oxygen can degrade the electrical performance of the TFTs [7], [8].…”

Section: Improvement Of Long-term Durability and Biasmentioning

confidence: 99%

Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

Han

Choi

Cho

et al. 2014

IEEE Electron Device Lett.

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We investigate the effects of ambient atmosphere on the electrical performance of p-type tin monoxide (SnO) thinfilm transistors (TFTs), and present the effective method for the passivation of SnO TFTs using a SU-8 organic layer. The experimental data shows that the SnO TFTs without a passivation layer suffer from the electrical performance degradation under humid environments, which implies that the formation of the passivation layer is necessary in p-type SnO TFTs for the stable operation of the devices. The SU-8 organic layer was successfully incorporated as a passivation layer of SnO TFTs. The SnO TFTs with a SU-8 passivation layer exhibit very similar transfer characteristics with those without a passivation layer, and show much improved long-term durability and bias stress stability compared with the SnO TFTs without a passivation layer under air environments.Index Terms-P-type SnO TFTs, SU-8 passivation layer, humidity, long-term durability, bias stress stability.

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“…However, in thin film researchthere are many reports indicating the stability of SnO films even at temperatures much higher than these values. Improved stability in such cases are speculated as an effect of reduced surface area of the film compared to the powder samples [20,21].…”

Section: Introductionmentioning

confidence: 99%

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

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Tin monoxide (SnO) is considered as one of the most important p-type oxidesavailable to date. Thin films ofSnO have been reported to possess bothan indirect bandgap (~0.7 eV)anda direct bandgap (~2.8 eV) withquite highhole mobility (~7 cm 2 /Vs) values. Moreover, thehole density in these films can be tuned from 10 15-10 19 cm-3 just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p-n hetero-structure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices.

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Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al₂O₃ Capping Layer

Cited by 39 publications

References 20 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

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Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al2O3 Capping Layer

Cited by 39 publications

References 20 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

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Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al₂O₃ Capping Layer