What determines carrier types in organic semiconductors? This question is growing in the recent studies of organic field-effect transistors (FETs), because ambipolar operation has been effected in FETs of several organic semiconductors. [1][2][3][4][5][6][7] This means that the carrier type -electron or holecould be controlled by the external voltage although each organic semiconductor is considered to have either p-or n-character in normal conduction. The origin of such a native carrier type is, in most cases, empirically explained by the energy positions of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) relative to the work function of the electrode metal. This answer is, however, too naïve and not quantitative, judging from the recent surface-science results [8][9][10][11][12][13][14] that point out the absence of universal rule for the energy alignment at the metal-organic semiconductor interfaces. In this study, we succeeded in changing the carrier injection barriers and observing the resultant change of carrier type in an organic FET. The key factor is the usage of an identical specimen for both electrical and electronic measurements. The field-effect mobilities, evaluated from conventional three-terminal measurements, decreased exponentially with precisely evaluated charge injection barrier, independent of carrier type; this suggests that the carrier type of intrinsic organic semiconductors is not determined a priori but is governed by the formation of an interface with a metal electrode.