Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant

Determination of certain sol-gel growth parameters of nickel oxide films

“…NiO, one of a few p-type metal oxide semiconductors, has a large band gap varied between 3.6 to 4.0 eV [10]. In the stoichiometric structure, NiO has insulator property with resistivity of about 10 13 Ω cm [11], however non-stoichiometry resulted from Ni 2 þ vacancies and oxygen interstitials in NiO structure makes it a p-type semiconductor material [1,12].…”

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

“…The reverse current of the diodes at a given reverse bias voltage under illumination is higher than that of the dark current, i.e., the reverse current increases with increase in illumination intensity [18][19][20][21]. Moreover, the applied voltage dependence of the reverse current can be attributed to the photoexcitation of charge carriers from the valence band to a defect-perturbed host state.…”

“…After turning on the illumination, the number of free charge carriers increases, and the photogenerated electrons contribute to the current. On the other hand, after turning off the illumination, the photocurrent decreases due to the trapping of the charge carriers in the deep levels [18,19,[33][34][35][36]. As a result, the diodes exhibit photoconducting behavior.…”

Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

“…Although stoichiometric NiO is an insulator with a high resistivity of~10 13 Ω-cm at room temperature, its resistivity can be significantly reduced via creating substantial concentrations of nickel vacancies and forming interstitial oxygen atoms in NiO crystallites [9]. Recently, it was demonstrated that by doping metallic elements, such as Li [10,11], Na [12], K [13,14] and Cu [15][16][17], the optical and electrical properties of the obtained NiO thin films could be enhanced/improved substantially. Namely, enhanced transparency, significantly lower resistivity and sufficiently large carrier concentrations were successfully achieved.…”