“…There is abundant evidence that subcritical crack growth is an important SiC fiber degradation mechanism, 45,[49][50][51] particularly at intermediate temperatures in oxidizing environments. [47][48][49]52,53 However, the nature of strength controlling flaws in SiC fibers, 21,54 and the identity of surface active species that promote growth of these flaws, is not well understood. SiC oxidation in steam can be either passive or active, 29,34,[55][56][57] but if steam is saturated with the Si(OH) 4 (g) oxidation product, only passive oxidation will occur.…”