2018
DOI: 10.1016/j.jeurceramsoc.2018.06.026
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Improvement of silicon carbide fibers mechanical properties by Cl2 etching

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Cited by 18 publications
(21 citation statements)
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“…The formers were heat treated at 650 °C for 10 min in air. The latter were unsized, followed by thin silica film removal in 10 vol.% hydrofluoric acid bath for 4 min, dried and then treated under pure chlorine at 650 °C for 40 min, method described elsewhere [1] , [2] , [3] .…”
Section: Experimental Design Materials and Methodsmentioning
confidence: 99%
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“…The formers were heat treated at 650 °C for 10 min in air. The latter were unsized, followed by thin silica film removal in 10 vol.% hydrofluoric acid bath for 4 min, dried and then treated under pure chlorine at 650 °C for 40 min, method described elsewhere [1] , [2] , [3] .…”
Section: Experimental Design Materials and Methodsmentioning
confidence: 99%
“…Lifetime variability can nicely be described using the Weibull statistic ( Eq. (10) ) [ 1 , 4 , 6 , 16 ], where t f.t0 is the characteristic time to failure and m df.t the static fatigue Weibull modulus. These parameters were also assessed by linear least square method applied to Weibull plots.…”
Section: Experimental Design Materials and Methodsmentioning
confidence: 99%
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“…There is abundant evidence that subcritical crack growth is an important SiC fiber degradation mechanism, 45,[49][50][51] particularly at intermediate temperatures in oxidizing environments. [47][48][49]52,53 However, the nature of strength controlling flaws in SiC fibers, 21,54 and the identity of surface active species that promote growth of these flaws, is not well understood. SiC oxidation in steam can be either passive or active, 29,34,[55][56][57] but if steam is saturated with the Si(OH) 4 (g) oxidation product, only passive oxidation will occur.…”
Section: Introductionmentioning
confidence: 99%