Improvement of SiO<sub>2</sub>/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion

Ohyu, K.; Itoga, Toshihiko; Nishioka, Yasushiro; Natsuaki, N.

doi:10.1143/jjap.28.1041

Cited by 33 publications

(7 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 1 illustrates three serious technological issues with the CMOS image sensor fabrication process. [4][5][6][7] The first issue is metallicimpurity contamination during device fabrication. 5,6,8,9) The second issue is the out-diffusion of oxygen impurity to the epitaxial layer from the Czochralski (CZ)-grown silicon wafer substrate during device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Koga¹,

Kadono²,

Shigematsu³

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 ' 10 16 atoms/cm 2 . This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

show abstract

Section: Introductionmentioning

confidence: 99%

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Koga¹,

Kadono²,

Shigematsu³

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…A low density of carrier traps in SiO2 films was achieved using ultra-dry oxid.i zLnq atmospher" . 4 ) F and Cl in SiO2 suppressed the generation of interface states.5r 6) we already reported that damage-free photo-excited cleaning with CIZ improved the break-down field of SiO2 and. surface recombination velocity at a Si-etch depth of more than 30 nm.…”

Section: Introductionmentioning

confidence: 82%

Reliability-Improvement of the MOS Structures Using Photo-Excited Dry Cleaning before Oxidation

Sato¹,

Sugino²,

Okuno³

et al. 1990

Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

“…14 Because of the stronger bonding energy of the Si-F bond ͑5.73 eV͒, F bonds favorably to Si compared to the Si-H bond ͑3.18 eV͒ 14 or Si-O bond. [21][22][23][24][25][26] In our test structure, FSO was deposited on TEOS oxide, which is placed on the wafer surface atop the device passivation. This way excessive fluorine causes a negative charge buildup in the bulk gate oxide.…”

Section: Discussionmentioning

confidence: 99%

Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

Trabzon

Awadelkarim

Werking³

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inImproved gate oxide integrity of strained Si n -channel metal oxide silicon field effect transistors using thin virtual substrates Characterization of atomic-layer-deposited silicon nitride / SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistors Atomic-layer-deposited silicon-nitride/SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistors Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal-oxide-semiconductor field effect transistors J.Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices This article reports on the impact of interlayer dielectric ͑ILD͒ deposition and processing on the characteristics and reliability of n-channel metal-oxide-silicon field-effect transistors ͑n-MOSFETs͒. The ILD materials used were silicon dioxide prepared from tetra-ethyl-ortho-silane, fluorinated silicon oxides ͑FSOs͒, and low-k polymers. The ILDs were deposited by means of plasma enhanced chemical vapor deposition ͑PECVD͒, PECVD and high density plasma ͑HDP͒, and spin coating, respectively. The devices with 90 Å gate oxide and 0.35 m channel lengths were sensitive to poly-Si gate definition etching steps with antenna ratio 5 and 70 K. To assess the degree of degradation, charge pumping ͑CP͒, gate-oxide integrity as well as transistor's parameters were measured after Fowler-Norheim ͑FN͒ stressing. It is found out that PECVD deposition of FSO resulted in the highest degradation to the MOSFETs, whereas spinning-on and processing polymer ILD yielded the best performing and the most reliable MOSFETs. It is also found that device degradation in wafers with FSO as ILD depends on the deposition method of FSO, and that this degradation bears a reverse charging-antenna correlation. It is argued that this correlation is caused by the interaction between fluorine and plasma-charging damage.

show abstract

Improvement of SiO₂/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion

Cited by 33 publications

References 5 publications

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Reliability-Improvement of the MOS Structures Using Photo-Excited Dry Cleaning before Oxidation

Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

Contact Info

Product

Resources

About

Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion

Cited by 33 publications

References 5 publications

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Reliability-Improvement of the MOS Structures Using Photo-Excited Dry Cleaning before Oxidation

Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

Contact Info

Product

Resources

About

Improvement of SiO₂/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion