Improvement of structural and electrical properties of Cu2O films with InN epilayers

Pan, Yingjun; Wang, Zheng; Peng, Ting; Wu, Kui; Wu, Hao; Liu, Chang

doi:10.1016/j.jcrysgro.2011.08.013

Cited by 5 publications

(1 citation statement)

References 34 publications

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“…Mg-doped InN films were grown on c-plane sapphire with GaN buffer layers by using radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE, SVTA 35-V-2). Thin GaN buffer layers, with a thickness of 50 nm, were grown under the optimized conditions with the substrate temperature at 760 °C and Ga source temperature at 1020 °C on c-plane sapphire [ 11 , 12 ]. InN films were then grown for 2 h under the optimized conditions reported previously, i.e., setting the In source temperature at 770 °C, substrate temperature at 450 °C, and N flow rate at 2.65 sccm [ 11 , 12 ].…”

Section: Methodsmentioning

confidence: 99%

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

Wang

Zhang

et al. 2016

Nanoscale Res Lett

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InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10−9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

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