Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Tao, Y. B.; Chen, Z.Z.; Yu, Tongjun; Yin, Yujing; Kang, Xiaoning; Zhi‐Jian, Yang; Ran, Guangzhao; Zhang, G.Y.

doi:10.1016/j.jcrysgro.2010.10.031

Cited by 9 publications

(9 citation statements)

References 17 publications

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“…8, a sharp and strong band edge emission is observed at 445 nm with a FWHM of 24.0 nm, indicating that high-quality GaN-based LED wafer is achieved on LSAT substrate using low-temperature RF-MBE working at high RF power which ensures the generation of high energetic N and hence the GaN nucleation at relatively low temperature. [47][48][49] From the PL peak location we can also deduce that the content of In in MQWs is about 0.13, which is consistent with our XRD measurement. 50 The EL measurement for the as-grown LED was also conducted at room temperature.…”

Section: Journal Of Materials Chemistry C Papersupporting

confidence: 86%

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

2013

J. Mater. Chem. C

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High-quality GaN-based light emitting diode (LED) wafers on La 0.3 Sr 1.7 AlTaO 6 (LSAT) (111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the first time. The structural properties and optoelectronic properties of as-grown LED wafers have been characterized by high-resolution X-ray diffraction (HRXRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL), and electroluminescence (EL).The small full-width at half-maximum (FWHM) values for both symmetric (0002) and asymmetric (10 12)HRXRD rocking curves indicate that LED wafers on LSAT (111) substrates are of high crystalline quality, the clear and pronounced Pendellösung fringes of XRD from as-grown multiple quantum wells (MQWs)suggest abrupt InGaN/GaN interfaces with designed layer periodicity and the well controlled composition and thickness of each barrier and well layer with the MQWs, which has also been confirmed by HRTEM characterization. The XRD reciprocal space map (RSM) of the (10 15) plane was used to further study the stress state in GaN-based LED wafers. AFM reveals high quality surface morphology for the GaN-based LED wafers on LSAT substrates, with a root-mean-square (RMS) roughness of 1.6 nm. The PL spectrum shows the band edge emission at 445 nm with a FWHM of 24.0 nm. The EL edge emission is observed at 448 nm with a FWHM of 22.6 nm at an injection current of 20 mA, with the light output power of 4.3 mW and the forward voltage of 3.18 V for the chip size of 300 Â 300 mm 2 , indicating good optoelectronic properties of as-grown GaN-based LEDs on LSAT substrates. This achievement reveals the tremendous potential of GaN-based LEDs on LSAT (111) for optoelectronic device applications.

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Section: Journal Of Materials Chemistry C Papersupporting

confidence: 86%

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

2013

J. Mater. Chem. C

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“…The lower growth temperature of GaN QB can result in poor crystal quality of MQWs [ 12 , 13 ]. Moreover, in order to alleviate indium desorption or re-evaporation during the temperature ramp-up and GaN QB growth process, a thin low-temperature GaN cap layer (LT-cap) is usually deposited immediately after the growth of InGaN QW layer [ 14 – 17 ]. Nevertheless, the crystal quality of GaN LT-cap layer is very poor.…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

et al. 2017

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InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.

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“…where ( ) is the PL intensity, 1 and 2 are the decay parameters, and and nr are the decay times for radiative and nonradiative recombination [17]. For the treated sample, the values of and nr were 6.2 × 10 −12 and 3.6 × 10 −9 s, respectively; for the untreated sample, they were 9.1 × 10 and 3.4 × 10 −9 s, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, the radiative decay time decreased as a result of pre-TMIn treatment, leading to a greater radiative recombination effect. Because carrier transport into weakly localized states requires a certain energy to overcome a potential barrier, it is more difficult for carriers to transfer into weakly localized states [17,18]. In the localized exciton model, trap centers are originated from a spatial disorder such as the fluctuation of indium within InGaN/GaN MQWs.…”

Section: Resultsmentioning

confidence: 99%

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

Dai

Wang

et al. 2014

International Journal of Photoenergy

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We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs). Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM), which is the explanation for the red-shift of photoluminescence (PL). Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

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Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Cited by 9 publications

References 17 publications

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

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