Improvement of the Crystallinity of MgZnO with a Zn Buffer Layer by Sol–Gel Spin‐coating Method

Abstract

We fabricate magnesium zinc oxide (MZO) thin films inserting a buffer layer between a film and a substrate with different annealing temperatures. The structural and optical properties of MZO thin films are investigated by using scanning electron microscopy, X-ray diffraction (XRD), and photoluminescence. The XRD patterns for the buffer layers annealed at 200 C show the narrowest full width at half maximum and the most intense (0 0 2) diffraction peak. In addition, the buffer layers decrease the magnitude of the residual stress between the MZO thin film and the silicon substrate. The near-band-edge emission peaks intensify and the deep-level emission peaks significantly intensify with increasing buffer layer annealing temperatures. Inserting a buffer layer between a film and a substrate improves the crystallinity of MZO thin films.

Well‐Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole‐Based Copolymers: Organic Field‐Effect Transistors and High‐Voltage Logic Applications

“…[ 34 ] This result is further supported by the narrower full‐width at half‐maximum (FWHM) of the first GIXD peak. [ 35 ] The FWHM values in the out‐of‐plane direction in the as‐cast, annealed at 240 °C, and annealed at 300 °C films were 0.056, 0.038, and 0.050, respectively. The crystallographic analysis revealed that the PDPADPP polymer film annealed at 240 °C had more extensive long‐range intermolecular interactions and an optimal crystal structure for OFET devices.…”